@article{CTT100830384, author = {"Y. Wu" and "H. Hasegawa" and "K. Kakushima" and "K. Ohmori" and "T. Watanabe" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "Y. Kataoka" and "K. Natori" and "K. Yamada" and "H. Iwai"}, title = {A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability}, journal = {Microelectronics Reliability}, year = 2014, } @inproceedings{CTT100830481, author = {H. Hasegawa and Y.Wu and J.Song and K. Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai}, title = {Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod}, booktitle = {}, year = 2014, } @misc{CTT100667477, author = {Wu Yan}, title = {A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface}, year = 2014, } @misc{CTT100667478, author = {呉研}, title = {ショットキー及びヘテロシリサイド・シリコン接合トンネルFETのプロセス及び構造因子に関する研究}, year = 2014, } @misc{CTT100690130, author = {Wu Yan}, title = {A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface}, year = 2014, } @misc{CTT100940786, author = {角嶋邦之 and 呉研 and 鬼村和志 and 岡本敏 and 小林 宏之}, title = {磁気トンネル接合素子及び磁気デバイス}, howpublished = {公開特許}, year = 2025, month = {}, note = {特願2024-064175(2024/04/11), 特開2025-161192(2025/10/24)} } @phdthesis{CTT100667477, author = {Wu Yan}, title = {A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface}, school = {東京工業大学}, year = 2014, } @phdthesis{CTT100667478, author = {呉研}, title = {ショットキー及びヘテロシリサイド・シリコン接合トンネルFETのプロセス及び構造因子に関する研究}, school = {東京工業大学}, year = 2014, } @phdthesis{CTT100690130, author = {Wu Yan}, title = {A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface}, school = {東京工業大学}, year = 2014, }