@article{CTT100609021,
  author = {J. Nishii and A. Ohtomo and M. Ikeda and Y. Yamada and K. Ohtani and H. Ohno and M. Kawasaki},
  title = {High-throughput synthesis and characterization of Mg<sub>1-x</sub>Ca<sub>x</sub>O films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors},
  journal = {Applied Surface Science},
  year = 2006,
}

@article{CTT100609022,
  author = {J. Nishii and A. Ohtomo and K. Ohtani and H. Ohno and M. Kawasaki},
  title = {High-mobility field-effect transistors based on single-crystalline ZnO channels},
  journal = {Japanese Journal of Applied Physics Part 2-Letters & Express Letters},
  year = 2005,
}

@article{CTT100609365,
  author = {T. I. Suzuki and A. Ohtomo and A. Tsukazaki and F. Sato and J. Nishii and H. Ohno and M. Kawasaki},
  title = {Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAIMgO<sub>4</sub> heterointerface},
  journal = {Advanced Materials},
  year = 2004,
}

@article{CTT100608590,
  author = {F. M. Hossain and J. Nishii and S. Takagi and T. Sugihara and A. Ohtomo and T. Fukumura and H. Koinuma and H. Ohno and M. Kawasaki},
  title = {Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors},
  journal = {Physica E-Low-Dimensional Systems & Nanostructures},
  year = 2004,
}

@article{CTT100608588,
  author = {F. M. Hossain and J. Nishii and S. Takagi and A. Ohtomo and T. Fukumura and Hiroshi Fujioka and H. Ohno and H. Koinuma and M. Kawasaki},
  title = {Modeling and simulation of polycrystalline ZnO thin-film transistors},
  journal = {Journal of Applied Physics},
  year = 2003,
}

@article{CTT100609017,
  author = {J. Nishii and F. M. Hossain and S. Takagi and T. Aita and K. Saikusa and Y. Ohmaki and I. Ohkubo and S. Kishimoto and A. Ohtomo and T. Fukumura and F. Matsukura and Y. Ohno and H. Koinuma and H. Ohno and M. Kawasaki},
  title = {High mobility thin film transistors with transparent ZnO channels},
  journal = {Japanese Journal of Applied Physics Part 2-Letters},
  year = 2003,
}