@article{CTT100820670, author = {Trong Tue Phan and Tatsuya Shimoda and Yuzuru Takamura}, title = {A facile route enabling low-temperature PZT films using solution-combustion synthesis approach}, journal = {APL Materials}, year = 2020, } @article{CTT100820674, author = {Jinwang Li and Hirokazu Tsukada and Takaaki Miyasako and Phan Trong Tue and Kazuhiro Akiyama and Hiromi Nakazawa and Yuzuru Takamura and Tadaoki Mitani and Tatsuya Shimoda}, title = {High-transconductance indium oxide transistors with a lanthanum-zirconium gate oxide characteristic of an electrolyte}, journal = {Journal of Applied Physics}, year = 2020, } @article{CTT100814283, author = {P. T. Tue and Reijiro Shimura and T. Shimoda and Yuzuru Yakamura}, title = {Direct integration of piezo-actuator array with active-matrix oxide thin-film transistors using a low-temperature solution process}, journal = {Sensors and Actuators A: Physical}, year = 2019, } @article{CTT100795125, author = {Phan Trong Tue and Jinwang Li and Tatsuya Shimoda}, title = {Nano-rheology printing of sub-0.2 μm channel length oxide thin-film transistors}, journal = {Nano Futures}, year = 2018, } @article{CTT100820678, author = {Peixin Zhu and Jinwang Li and Phan Trong Tue and Satoshi Inoue and Tatsuya Shimoda}, title = {Hybrid cluster precursors of the LaZrO insulator for transistors: lowering the processing temperature}, journal = {Scientific Reports}, year = 2018, } @article{CTT100820691, author = {Phan Trong Tue and Reijiro Shimura and Kazuhiro Fukada and Keisuke Satou and Jinwang Li and Tatsuya Shimoda and Yuzuru Takamura}, title = {EFFECT OF ULTRAVIOLET/OZONE TREATMENT ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF SOLUTION-PROCESSED PIEZOELECTRIC THICK-FILM LEAD-ZIRCONIUM-TITANATE (PZT)}, journal = {International Journal of Nanotechnology}, year = 2018, } @article{CTT100795124, author = {Phan Trong Tue and Kazuhiro Fukada and Tatsuya Shimoda}, title = {High-performance oxide thin film transistor fully fabricated by a direct rheology-imprinting}, journal = {Applied Physics Letters}, year = 2017, } @article{CTT100820685, author = {Phan Trong Tue and Tatsuya Shimoda and Yuzuru Takamura}, title = {Lift-off process for fine-patterned PZT film using metal oxide as a sacrificial layer}, journal = {Journal of Micromechanics and Microengineering}, year = 2016, } @article{CTT100820686, author = {Phan Trong Tue and Tatsuya Shimoda and Yuzuru Takamura}, title = {Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer}, journal = {Ceramics International}, year = 2016, } @article{CTT100820689, author = {Phan Trong Tue and Satoshi Inoue and Yuzuru Takamura and Tatsuya Shimoda}, title = {Combustion synthesized Indium-Tin-Oxide (ITO) thin film for Source/Drain electrodes in all solution-processed oxide thin film transistors}, journal = {Applied Physics A: Materials Science and Processing}, year = 2016, } @article{CTT100820693, author = {Satoshi Inoue and Tue Trong Phan and Tomoko Hori and Hiroaki Koyama and Tatsuya Shimoda}, title = {Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process}, journal = {Physica Status Solidi A}, year = 2015, } @article{CTT100820725, author = {Phan Trong Tue and Takaaki Miyasako and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Effect of coercive voltage and charge injection on performance of a ferroelectric-gate thin-film transistor}, journal = {Advances in Materials Science and Engineering}, year = 2013, } @article{CTT100820694, author = {Toshihiko Kaneda and Daisuke Hirose and Takaaki Miyasako and Phan Trong Tue and Yoshitaka Murakami and Shinji Kohara and Jinwang Li and Tadaoki Mitani and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Rheology Printing for Metal-Oxide Patterns and Transistors}, journal = {Journal of Materials Chemistry C}, year = 2013, } @article{CTT100820726, author = {Phan Trong Tue and Jinwang Li and Takaaki Miyasako and Satoshi Inoue and Tatsuya Shimoda}, title = {Low-temperature all solution-derived amorphous oxide thin film transistors}, journal = {IEEE Transactions on Electron Devices}, year = 2013, } @article{CTT100820727, author = {Phan Trong Tue and Takaaki Miyasako and Koichi Higashimine and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Surface‒Modified Lead‒Zirconium‒Titanate System for Solution-Processed Ferroelectric-Gate Thin-Film Transistors}, journal = {Applied Physics A: Materials Science and Processing}, year = 2013, } @article{CTT100820730, author = {Pham Van Thanh and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure}, journal = {Ferroelectric Letters Section}, year = 2013, } @article{CTT100820729, author = {Huynh Thi Cam Tu and Satoshi Inoue and Phan Trong Tue and Takaaki Miyasako and Tatsuya Shimoda}, title = {Investigation of Polysilazane-Based SiO2 Gate Insulator for Oxide Semiconductor Thin-Film Transistors}, journal = {IEEE Transactions on Electron Devices}, year = 2013, } @article{CTT100820728, author = {Phan Trong Tue and Takaaki Miyasako and Jinwang Li and Huynh Thi Cam Tu and Satoshi Inoue and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {High-Performance Solution-Processed ZrInZnO Thin-Film Transistors}, journal = {IEEE Transactions on Electron Devices}, year = 2012, } @article{CTT100820731, author = {Pham Van Thanh and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator}, journal = {Japanese Journal of Applied Physics}, year = 2012, } @article{CTT100820732, author = {Takaaki Miyasako and Bui Nguyen Quoc Trinh and Masatoshi Onoue and Toshihiko Kaneda and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Ferroelectric-gate thin-film transistor fabricated by total solution deposition process}, journal = {Japanese Journal of Applied Physics}, year = 2011, } @article{CTT100820733, author = {Phan Trong Tue and Takaaki Miyasako and Bui Nguyen Quoc Trinh and Jinwang Li and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Optimization of Pt and PZT films for Ferroelectric-Gate Thin Film Transistors}, journal = {FERROELECTRICS}, year = 2010, } @article{CTT100820735, author = {Takaaki Miyasako and Bui Nguyen Quoc Trinh and Masatoshi Onoue and Toshihiko Kaneda and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Totally solution-processed ferroelectric-gate thin-film transistor}, journal = {Applied Physics Letters}, year = 2010, } @article{CTT100820734, author = {Jinwang Li and Hiroyuki Kameda and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tadaoki Mitani and Tatsuya Shimoda}, title = {A low-temperature crystallization path for device-quality ferroelectric films}, journal = {Applied Physics Letters}, year = 2010, } @inproceedings{CTT100820804, author = {Phan Trong Tue and Satoshi Inoue and Hiroaki Koyama and Yuzuru Takamura and Tatsuya Shimoda}, title = {All oxide all solution-processed active matrix thin-film transistor for electrophoretic display application}, booktitle = {}, year = 2015, } @inproceedings{CTT100820803, author = {Hiroaki Koyama and Kazuhiro Fukada and Yoshitaka Murakami and Phan Trong Tue and Shogo Tanaka and Satoshi Inoue and Tatsuya Shimoda}, title = {Oxide TFT Fabrication by Nano‐Rheology Printing for Display Application}, booktitle = {}, year = 2014, } @inproceedings{CTT100820802, author = {Phan Trong Tue and Hiroaki Koyama and Jinwang Li and Satoshi Inoue and Tatsuya Shimoda}, title = {Development of amorphous oxide thin film transistors fabricated by a total solution process for display application}, booktitle = {}, year = 2014, } @inproceedings{CTT100820801, author = {Yoshitaka Murakami and Phan Trong Tue and Hirokazu Tsukada and Jinwang Li and Tatsuya Shimoda}, title = {Preparation of Ruthernium metal and Ruthernium oxide thin films by a low-temperature solution process}, booktitle = {}, year = 2013, } @inproceedings{CTT100820799, author = {Pham Van Thanh and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Phan Trong Tue and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Analysis on interface layer between Pt electrode and ferroelectric layer of solution-processed PZT capacitor}, booktitle = {}, year = 2011, } @inproceedings{CTT100820800, author = {Phan Trong Tue and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Pham Van Thanh and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Lanthanum oxide capping layer for solution-processed ferroelectric-gate thin-film transistors}, booktitle = {}, year = 2011, } @inproceedings{CTT100820798, author = {Phan Trong Tue and Bui Nguyen Quoc Trinh and Takaaki Miyasako and Eisuke Tokumitsu and Tatsuya Shimoda}, title = {Fabrication and Characterization of a Ferroelectric-Gate FET With a ITO/PZT/SRO/Pt Stacked Structure}, booktitle = {}, year = 2011, }