@article{CTT100800228,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {真空アニール法がAl2O3/GaSb MOS界面に与える影響},
  journal = {電子情報通信学会技術研究報告 信学技報},
  year = 2013,
}

@article{CTT100647718,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and 安田哲二},
  title = {Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100647415,
  author = {Miyuki Kouda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and ト部友二 and 安田哲二},
  title = {Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647416,
  author = {Miyuki Kouda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and ト部友二 and 安田哲二},
  title = {Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@inproceedings{CTT100654578,
  author = {Takuya Suzuki and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657213,
  author = {鈴木 拓也 and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657190,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Comparative study of CeO2 gate dielectrics using chemical vapor deposition and atomic layer deposition},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100631047,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {La2O3 のALD成長のための原料選択：シクロペンタジエニル錯体とアミディネート錯体の比較},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627782,
  author = {鈴木 拓也 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and 安田哲二},
  title = {ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100616049,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {La(iPrCp)3 を原料としたLa2O3のALD: Self-limiting 成長条件の明確化},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616048,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部 友二 and 安田 哲二},
  title = {CVD法によるCeOx絶縁膜の作製と特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631000,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Self-limited growth of La oxides with ALD},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630998,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Electrical characterization of CVD deposited Ce oxides},
  booktitle = {},
  year = 2010,
}