@inproceedings{CTT100660876,
  author = {Hiroyuki Yamada and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Satoshi Yamakawa and EISUKE TOKUMITSU},
  title = {Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658533,
  author = {Eisuke Tokumitsu and Isahaya Yamamura and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Hiroaki Sumitani and Tatsuo Oomori},
  title = {Comparative Study of Metalorganic Chemical Vapour Deposition of HfO2 and Al2O3 Gate Insulators on SiC for Power MOSFET Applications},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100631923,
  author = {Eisuke Tokumitsu and Akio Ishiguro and Hiroyuki Yamada and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Hiroaki Sumitani and Tatsuo Oomori},
  title = {Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632302,
  author = {木田憲之助 and 日野史郎 and 三浦 成久 and 今泉昌之 and 岸谷博昭 and 徳光永輔},
  title = {H(CH3)2Alを用いたMOCVD法SiC基板上へのAl2O3膜の形成とAl2O3/SiC MOSFETの電気的特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632115,
  author = {山田泰之 and 石黒暁夫 and 日野史郎 and 三浦 成久 and 今泉昌之 and 岸谷博昭 and 徳光永輔},
  title = {Al2O3堆積膜をゲート絶縁膜に用いたSiC-MOSFETの作製と評価},
  booktitle = {信学技報},
  year = 2011,
}