@article{CTT100775941,
  author = {K. Tokimatsu and S. Murakami and T. Adachi and R. Ii and R. Yasuoka and M. Nishio},
  title = {Long-term Demand and Supply of Non-ferrous Mineral Resources by a Mineral Balance Model},
  journal = {Mineral Economics},
  year = 2017,
}

@article{CTT100634578,
  author = {Kenichi Goto and Tatsuya Yamazaki and Yasuo Nara and Tetsu Fukano and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {Ti Salicide Process for Sub-quarter-Micron CMOS Devices},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 1994,
}

@article{CTT100634573,
  author = {Manabu Kojima and Atsushi Fukuroda and Tetsu Fukano and Naoshi Higaki and Tatsuya Yamazaki and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques},
  journal = {IEICE TRANSACTIONS on Electronics},
  year = 1993,
}

@article{CTT100634566,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Yoshihiro Arimoto and Takashi Ito and Yuji Furumura and Ikuo.Namura and Hiroshi Goto and Toshiya Tahara},
  title = {SiC Growth and its Application  to High Speed Si-HBTs},
  journal = {Microelectronic Engineering},
  year = 1992,
}

@article{CTT100634551,
  author = {Atsushi Fukuroda and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {Si Wafer Bonding with Ta Silicide Formation},
  journal = {Japanese Journal of Applied Physics},
  year = 1991,
}

@article{CTT100634549,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Takashi Ito},
  title = {Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter},
  journal = {Japanese Journal of Applied Physics},
  year = 1991,
}

@article{CTT100634546,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Takashi Ito},
  title = {Si Hetero-Bipolar Transistor with a Fluorine Doped SiC Emitter and a Thin, Highly-Doped Epitaxial Base},
  journal = {IEEE Transactions on Electron Devices},
  year = 1990,
}

@article{CTT100634547,
  author = {Toshihiro Sugii and Takayuki Aoyama and Takashi Ito},
  title = {Low-Temperature Growth of SiC on Si by Gas-Source MBE},
  journal = {Journal of The Electrochemical Society},
  year = 1990,
}

@article{CTT100634540,
  author = {Takayuki Aoyama and Toshihiro Sugii and Takashi Ito},
  title = {Determination of Band Line-up in βSiC/Si Heterojunction for Si-HBTs},
  journal = {Applied Surface Science},
  year = 1989,
}

@article{CTT100634542,
  author = {Toshihiro Sugii and Takayuki Aoyama and Takashi Ito},
  title = {Polycrystalline SiC for A Wide-Gap Emitter of Si-HBTs},
  journal = {Journal of The Electrochemical Society},
  year = 1989,
}

@article{CTT100634537,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Takashi Ito},
  title = {Improved Current Gain in Bipolar Transistor with Bandgap Narrowing in Base},
  journal = {Electronics Letters},
  year = 1989,
}

@article{CTT100634536,
  author = {Toshihiro Sugii and Takashi Ito and Yuji Furumura and Toru Doki and Fumio Mieno and Mamoru Maeda},
  title = {β-SiC/Si Hetero Junction Bipolar Transistors with High Current Gain},
  journal = {IEEE Electron Device Letters},
  year = 1988,
}

@article{CTT100634535,
  author = {Toshihiro Sugii and Takashi Ito and Hajime Ishikawa},
  title = {Low-Temperature Fabrication of Silicon Nitride Films by ArF Excimer Laser lrradiation},
  journal = {Japanese Journal of Applied Physics},
  year = 1988,
}

@article{CTT100634530,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Tetsu Fukano and Takashi Ito},
  title = {Epitaxially Grown Base Transistor for High-Speed Operation},
  journal = {Electron Device Letters, IEEE},
  year = 1987,
}

@article{CTT100634531,
  author = {Toshihiro Sugii and Takashi Ito and Yuji Furumura and Makoto Doki and Fumio Mieno and Mamoru Maeda},
  title = {Si Heterojunction Bipolar Transistors with Single-Crystalline β-SiC Emitters},
  journal = {Journal of The Electrochemical Society},
  year = 1987,
}

@article{CTT100634520,
  author = {Toshihiro Sugii and Takashi Ito and Hajime Ishikawa},
  title = {Excimer Laser Enhanced  Nitridation of Silicon Substrates},
  journal = {Applied Phisics Letters},
  year = 1984,
}

@inproceedings{CTT100634722,
  author = {Akira Sato and Youichi Momiyama and Yasuo Nara and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {A 0.5μm EEPROM Cell Using Poly-Si TFT Technology},
  booktitle = {Proc. 5lth Annual Device Research Conference},
  year = 1993,
}

@inproceedings{CTT100634725,
  author = {Tatsuya Yamazaki and Kenichi Goto and Tetsu Fukano and Yasuo Nara and Toshihiro Sugii and Takashi Ito},
  title = {2l psec Switching 0.13μm-CMOS at Room Temperature Using High Performance Co Salicide Process},
  booktitle = {IEDM Dig. of Tech.},
  year = 1993,
}

@inproceedings{CTT100634690,
  author = {Atsushi Fukuroda and Toru Miyabo and Manabu Kojima and Tetsu Fukano and Naoshi Higaki and Tatsuya Yamazaki and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor},
  booktitle = {Ext. Abst. of Int. Conf. on SSDM},
  year = 1991,
}

@inproceedings{CTT100634699,
  author = {Takashi Ito and Toshihiro Sugii and Tatsuya Yamazaki},
  title = {SiC(F) Hetero-Emitter and Epitaxial Base Bipolar Transistors},
  booktitle = {4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV- IV Materials},
  year = 1991,
}

@inproceedings{CTT100634696,
  author = {Tatsuya Yamazaki and Itaru Namura and Toshihiro Sugii and Hiroshi Goto and Akinori Tahara and Takashi Ito},
  title = {High Speed Si Hetero-Bipolar Transistor with a SiC Wide-gap Emitter and an Ultra-thin Heavily Doped Photoepitaxially Grown Base},
  booktitle = {Proc. IEEE 1991 Bipolar Circuits and Technology Meeting},
  year = 1991,
}

@inproceedings{CTT100634706,
  author = {Naoshi Higaki and Tetsu Fukano and Atsushi Fukuroda and Toshihiro Sugii and Yoshihiro   Arimoto and Takashi Ito},
  title = {A Thin-Base Lateral Bipolar Transistor Fabricated on   Bonded SOI},
  booktitle = {Dig. Tech. Papers of Symp. on VLSI Tech.},
  year = 1991,
}

@inproceedings{CTT100634694,
  author = {Manabu Kojim and Atsushi Fukuroda and Tetsu Fukano and Naoshi Higaki and Tatsuya Yamazaki and Toshihiro Sugii and Yoshihiro Arimoto and Takashi Ito},
  title = {High-Speed Epitaxial Base Transistors on Bonded SOI},
  booktitle = {IEEE 1991 ,Bipolar Circuits and Technology Meeting},
  year = 1991,
}

@inproceedings{CTT100634682,
  author = {Toshihiro Sugii and Takayuki Aoyama and Yuji Furumura and Takashi Ito},
  title = {SiC Growth   and Its Application to Si-HBTs},
  booktitle = {Proc. of American Vacuum Society Topical Symp. on Si Based Heterostructures},
  year = 1990,
}

@inproceedings{CTT100634687,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Takashi Ito},
  title = {Process Technologies for    Advanced Si Bipolar Devices},
  booktitle = {Ext. Abst, of Int. Conf. on SSDM},
  year = 1990,
}

@inproceedings{CTT100634670,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Kunihiro Suzuki and Tetsu Fukano and Takashi Ito},
  title = {Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base},
  booktitle = {Tech. Dig. of IEDM},
  year = 1989,
}

@inproceedings{CTT100634657,
  author = {Takayuki Aoyama and Toshihiro Sugii and Takashi Ito},
  title = {Determination of Band Lineup In β-SiC/Si Hetero Junction for HBTs},
  booktitle = {Abs. 2nd Int. Conf. on Formation of Semiconductor Interfaces},
  year = 1988,
}

@inproceedings{CTT100634661,
  author = {Tetsuo Eshita and Kunihiro Suzuki and Toru Hara and Fumio Mieno and Yuji Furumura and Mamoru  Maeda and Toshihiro Sugii and Takashi Ito},
  title = {Low-Temperature Heteroepitaxy of β- SiC on Si(111) Substrates},
  booktitle = {Proc. MRS Symp.},
  year = 1988,
}

@inproceedings{CTT100634634,
  author = {Tatsuya Yamazaki and Satoru Watanabe and Toshihiro Sugii and Takashi Ito},
  title = {Ultra Shallow p+ /n Junction Formed by Photo-Enhanced Low-Temperature Epitaxy},
  booktitle = {Tech. Dig. of IEDM},
  year = 1987,
}

@inproceedings{CTT100634638,
  author = {Toshihiro Sugii and Tatsuya Yamazaki and Tetsu Fukano and Takashi Ito},
  title = {Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy},
  booktitle = {Dig. of Symp. on VLSI Tech.},
  year = 1987,
}

@inproceedings{CTT100634626,
  author = {Toshihiro Sugii and Takashi Ito and Yuji Furumura and Mikio Doki and Fumio Mieno and Mamoru Maeda},
  title = {Epitaxial SiC Emitter for High Speed Bipolar VLSI's},
  booktitle = {Dig. Symp. on VLSI Tech.},
  year = 1986,
}

@inproceedings{CTT100634611,
  author = {Toshihiro Sugii and Takashi Ito and Hajime Ishikawa},
  title = {Low Temperature Nitridation of Silicon by Excimer Laser lrradiation},
  booktitle = {Ext. Abst. of 16th (1984 International Conf. on SSDM},
  year = 1984,
}