@book{CTT100876656,
  author = {Hideo Hosono and Hideya Kumomi},
  title = {Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory},
  publisher = {Wiley},
  year = 2022,
}

@article{CTT100810725,
  author = {Kenji M. Kojima and Masatoshi Hiraishi and Hirotaka Okabe and Akihiro Koda and Rryosuke Kadono and Keisuke Ide and Satoru Matsuishi and Hideya Kumomi and Toshio Kamiya and Hideo Hosono},
  title = {Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon},
  journal = {Applied Physics Letters},
  year = 2019,
}

@article{CTT100760745,
  author = {Keisuke Ide and * Kyohei Ishikawa and Haochun Tang and Takayoshi Katase and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening},
  journal = {physica status solidi (a)},
  year = 2018,
}

@article{CTT100743274,
  author = {Haochun Tang and Yosuke Kishida and Keisuke Ide and Yoshitake Toda and Hidenori Hiramatsu and Satoru Matsuishi and Shigenori Ueda and Naoki Ohashi and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films},
  journal = {ECS J. Sol. State Sci. Technol.},
  year = 2017,
}

@article{CTT100736242,
  author = {Keisuke Ide and Mitsuho Kikuchi and Masato Ota and Masato Sasase and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors},
  journal = {Jpn. J. Appl. Phys.},
  year = 2017,
}

@article{CTT100736284,
  author = {K.Ide and M. Kikuchi and M. Sasase and H. Hiramatsu and H. Kumomi and H. Hosono and T. Kamiya},
  title = {Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films},
  journal = {; Proc. Active-Matrix Flatpanel Displays and Devices (AMFPD2016) (2016 The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices)},
  year = 2017,
}

@article{CTT100714904,
  author = {Haochun Tang and Keisuke Ide and Hidenori Hiramatsu and Shigenori Ueda and Naoki Ohashi and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors},
  journal = {Thin Solid Films},
  year = 2016,
}

@article{CTT100693329,
  author = {Jakub Grochowski and Yuichiro Hanyu and Katsumi Abe and Jakub Kaczmarski and Jan Dyczewski and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure},
  journal = {J. Disp. Technol.},
  year = 2015,
}

@article{CTT100693328,
  author = {Takatoshi Orui and Johannes Herms and Yuichiro Hanyu and Shigenori Ueda and Ken Watanabe and Isao Sakaguchi and Naoki Ohashi and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Charge Compensation by Excess Oxygen in Amorphous In-Ga-Zn-O Films Deposited by Pulsed Laser Deposition},
  journal = {J. Disp. Technol.},
  year = 2015,
}

@article{CTT100693330,
  author = {Hideya Kumomi and Toshio Kamiya and Hideo Hosono},
  title = {Advances in Oxide Thin-Film Transistors in Recent Decade and Their Future},
  journal = {(in Japanse, Hakumaku Transistor Gijutsu no Subete)},
  year = 2015,
}

@article{CTT100700427,
  author = {Haochun Tang and Kyohei Ishikawa and Keisuke Ide and Hidenori Hiramatsu and Shigenori Ueda and Naoki Ohashi and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films},
  journal = {J. Appl. Phys.},
  year = 2015,
}

@article{CTT100682941,
  author = {Min Liao and Zewen Xiao and Fan-Yong Ran and Hideya Kumomi and Toshio Kamiya and Hideo Hosono},
  title = {Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films},
  journal = {ECS J. Solid State Sci. Technol.},
  year = 2015,
}

@article{CTT100677104,
  author = {Takaya Miyase and Ken Watanabe and Isao Sakaguchi and Naoki Ohashi and Kay Domen and Kenji Nomura and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering},
  journal = {ECS J. Solid State Sci. Technol.},
  year = 2014,
}

@article{CTT100680963,
  author = {Y. Hanyu and K. Abe and K. Domen and K. Nomura and H. Hiramatsu and H. Kumomi and H. Hosono and T. Kamiya},
  title = {Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs},
  journal = {J. Displ. Technol.},
  year = 2014,
}

@article{CTT100667908,
  author = {Katsumi Abe and Ayumu Sato and Kenji Takahashi and Hideya Kumomi and Toshio Kamiya and Hideo Hosono},
  title = {Mobility<sup>- </sup>and temperature-dependent device model for amorphous In–Ga–Zn–O thin-film transistors},
  journal = {Thin Solid Films},
  year = 2013,
}

@inproceedings{CTT100760846,
  author = {井手 啓介 and 太田 雅人 and 岸田 陽介 and 片瀬 貴義 and 平松 秀典 and 上田 茂典 and 雲見 日出也 and 細野 秀雄 and 神谷 利夫},
  title = {[講演奨励賞受賞記念講演] 全反射硬X線光電子分光法によるアモルファス酸化物半導体の価電子帯直上欠陥の深さ方向分布},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100753187,
  author = {井手 啓介 and 岸田 陽介 and 片瀬 貴義 and 平松 秀典 and 上田 茂典 and 雲見 日出也 and 細野 秀雄 and 神谷 利夫},
  title = {アモルファス酸化物半導体の価電子帯直上欠陥の分離},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100681515,
  author = {Toshio Kamiya and Hideya Kumomi and Hideo Hosono},
  title = {Multiple Origins of Near-VBM Defects and Passivation Effects in a-In-Ga-Zn-O; Digest of The 21st International Display Workshops 2014 (IDW'14)},
  booktitle = {},
  year = 2014,
}

@misc{CTT100886520,
  author = {細野秀雄 and 金正煥 and 雲見日出也},
  title = {光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法},
  howpublished = {登録特許},
  year = 2022,
  month  = {},
  note   = {特願2020-528761(2019/06/14), 再表2020/008839(2021/09/24), 特許第7181641号(2022/11/22)}
}


@misc{CTT100845252,
  author = {細野秀雄 and 金正煥 and 方俊皓 and 雲見日出也 and 渡邉　暁 and 大越　雄斗 and 宮川　直通 and 石橋　奈央 and 増茂　邦雄 and 中村　伸宏},
  title = {半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット},
  howpublished = {公開特許},
  year = 2020,
  month  = {},
  note   = {特願2019-557079(2018/10/30), 再表2019/107046(2020/12/17)}
}


@misc{CTT100808417,
  author = {細野秀雄 and 雲見日出也 and 中村　伸宏　 and 渡邉　暁　 and 伊藤　和弘　 and 宮川　直通　},
  title = {半導体素子},
  howpublished = {公開特許},
  year = 2019,
  month  = {},
  note   = {特願2018-543876(2017/09/29), 特開(再)2018-066483(2019/07/18)}
}


@misc{CTT100785215,
  author = {松崎功佑 and 細野秀雄 and 大場史康 and 熊谷悠 and 原田航 and 雲見日出也},
  title = {窒化銅半導体およびその製造方法},
  howpublished = {登録特許},
  year = 2021,
  month  = {},
  note   = {特願2017-041774(2017/03/06), 特開2018-148031(2018/09/20), 特許第6951734号(2021/09/29)}
}


@misc{CTT100808475,
  author = {細野秀雄 and 神谷利夫 and 雲見日出也 and 金正煥 and 中村　伸宏 and 渡邉　暁 and 宮川　直通},
  title = {酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体},
  howpublished = {登録特許},
  year = 2022,
  month  = {},
  note   = {特願2018-503092(2017/02/23), 再表2017/150351(2019/01/10), 特許第7130209号(2022/08/26)}
}


@misc{CTT100808502,
  author = {細野秀雄 and 雲見日出也 and 中村　伸宏　 and 渡邉　暁　 and 渡邉　俊成　 and 宮川　直通　},
  title = {光電変換素子を製造する方法},
  howpublished = {公開特許},
  year = 2018,
  month  = {},
  note   = {特願2017-553783(2016/11/21), 再表2017/094547(2018/09/13)}
}


@misc{CTT100733879,
  author = {松石聡 and 細野秀雄 and 雲見日出也},
  title = {遍歴電子反強磁性体およびその製造法},
  howpublished = {公開特許},
  year = 2016,
  month  = {},
  note   = {特願2015-027978(2015/02/16), 特開2016-150861(2016/08/22)}
}