@article{CTT100647716,
  author = {Miranda Enrique and Takamasa Kawanago and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647717,
  author = {Miranda Enrique and shinichi kano and C. Dou and Kuniyuki KAKUSHIMA and J. Sune and HIROSHI IWAI},
  title = {Nonlinear conductance quantization effects in CeO/SiO-based resistive switching devices},
  journal = {APPLIED PHYSICS LETTERS},
  year = 2012,
}