@inproceedings{CTT100674087,
  author = {神谷真行 and 武井優典 and 齋藤渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673463,
  author = {陳江寧 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673474,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 大橋弘通 and 岩井洋 and 齋藤渉},
  title = {TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674046,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674049,
  author = {武井優典 and 岡本真里 and マンシン and 萱沼怜 and 神谷真行 and 齋藤渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672909,
  author = {Jiangning Chen and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and 齋藤渉},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673148,
  author = {Yusuke Takei and Mari Okamoto and S. Man and Ryosuke Kayanuma and Masayuki Kamiya and 齋藤渉 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Contact resistances depending on AlGaN layer thickness  for AlGaN/GaN HEMT structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673149,
  author = {Masayuki Kamiya and Yusuke Takei and 齋藤渉 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100661660,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661655,
  author = {武井優典 and 神谷真行 and 寺山一真 and 米澤宏昭 and 齋藤 渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100667672,
  author = {齋藤渉 and 森郁 and 杉浦秀和 and 丸山武男 and 渡辺正裕 and 浅田雅洋},
  title = {CaF<sub>2</sub>上極薄膜CoSi<sub>2</sub>電気抵抗のCaF<sub>2</sub>結晶依存性},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100667665,
  author = {末益崇 and 齋藤渉 and 森郁 and 河野義史 and 渡辺正裕 and 浅田雅洋},
  title = {CoSi<sub>2</sub>/CaF<sub>2</sub>量子干渉トランジスタの微分負性抵抗を用いたホットエレクトロン輸送効率導出},
  booktitle = {},
  year = 1996,
}