@article{CTT100887487,
  author = {Y. Ito and S. Tamai and T. Hoshi and T. Gotow and Y. Miyamoto},
  title = {Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers},
  journal = {JPN. J. APPL. PHYS.},
  year = 2023,
}

@article{CTT100875016,
  author = {宮本恭幸 and 後藤高寛},
  title = {GaN HEMTでの二次元電子ガスキャリヤ濃度と ゲートドレイン間リーク電流理論計算},
  journal = {電気学会論文誌C},
  year = 2022,
}

@article{CTT100845762,
  author = {T. Aota and A. Hayasaka and I. Makabe and S. Yoshida and T. Gotow and Y. Miyamoto},
  title = {Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@article{CTT100842577,
  author = {Manabu Mitsuhara and Takahiro Gotow and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates},
  journal = {Journal of Crystal Growth},
  year = 2020,
}

@article{CTT100830305,
  author = {Yasuyuki Miyamoto and Takahiro Gotow},
  title = {Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer},
  journal = {IEICE Transactions on Electronics},
  year = 2020,
}

@article{CTT100811758,
  author = {T. Gotow and M. Mitsuhara and T. Hoshi and H. Sugiyama and M. Takenaka and S. Takagi},
  title = {Performance enhancement of p-GaAsSb/InGaAs hetero-junction vertical TFETs by using abrupt source impurity profile},
  journal = {Journal of Applied Physics},
  year = 2019,
}

@article{CTT100813387,
  author = {岩木拓也 and 遠藤勇輝 and 平岡瑞穂 and 岸本尚之 and 林拓也 and 渡邊一世 and 山下良美 and 原紳介 and 後藤高寛 and 笠松章史 and 遠藤聡 and 藤代博記},
  title = {歪Al0.40In0.60Sb/Al0.25In0.75Sbステップバッファを用いたGaInSb n-チャネルHEMT},
  journal = {信学技報},
  year = 2019,
}

@article{CTT100811764,
  author = {M. Hiraoka and Y. Endoh and K. Osawa and N. Kishimoto and T. Hayashi and R. Machida and I. Watanabe and Y. Yamashita and S. Hara and T. Gotow and A. Kasamatsu and A. Endoh and H. I. Fujishiro},
  title = {Improved Electron Transport Properties of GaInSb Quantum Well Channel Using Strained-AlInSb/AlInSb Stepped Buffer},
  journal = {Physica status solidi A},
  year = 2019,
}

@article{CTT100811766,
  author = {S. Takagi and K. Kato and D. H. Ahn and T. Gotow and R. Takaguchi and T.-E. Bae and K. Toprasertpong and M. Takenaka},
  title = {Tunneling FET Device Technology for Ultra-Low power integrated Circuits},
  journal = {ECS Transactions},
  year = 2019,
}

@article{CTT100800768,
  author = {Takahiro Gotow and Manabu Mitsuhara and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers},
  journal = {Journal of Applied Physics},
  year = 2019,
}

@article{CTT100800765,
  author = {高木信一 and 加藤公彦 and 安大煥 and 後藤高寛 and 松村亮 and 高口遼太郎 and 竹中充},
  title = {材料エンジニアリングによるトンネル電界効果トランジスタの高性能化},
  journal = {電子情報通信学会論文誌 C},
  year = 2019,
}

@article{CTT100800767,
  author = {Masachi Yamaguchi and Takahiro Gotow and Mitsuru Takenaka and Shinichi Takagi},
  title = {Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators},
  journal = {Japanese Journal of Applied Physics},
  year = 2019,
}

@article{CTT100800764,
  author = {Shinichi Takagi and Daehwan Ahn and Takahiro Gotow and Chiaki Yokoyama and Chih-Yu Chang and Kiyoshi Endo and Kimihiko Kato and Mitsuru Takenaka},
  title = {Ultra-Low Power III-V-Based MOSFETs and Tunneling FETs},
  journal = {ECS Transactions},
  year = 2018,
}

@article{CTT100800233,
  author = {Takahiro Gotow and Manabu Mitsuhara and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors},
  journal = {Journal of Applied Physics},
  year = 2017,
}

@article{CTT100800763,
  author = {Shinichi Takagi and Daehwan Ahn and Munetaka Noguchi and Sanghee Yoon and Takahiro Gotow and Kouichi Nishi and Minsoo Kim and Taeeon Bae and Takumi Katoh and Ryo Matsumura and Ryotaro Takaguchi and Mitsuru Takenaka},
  title = {Low power Tunneling FET technologies using Ge/III-V materials},
  journal = {ECS Transactions},
  year = 2017,
}

@article{CTT100800483,
  author = {Shinichi Takagi and Mengnan Ke and Chih-Yu Chang and Chiaki Yokoyama and Masafui Yokoyama and Takahiro Gotow and Kouichi Nishi and Sanghee Yoon and Mitsuru Takenaka},
  title = {MOS interface defect control in Ge/III-V gate stacks},
  journal = {ECS Transactions},
  year = 2017,
}

@article{CTT100800232,
  author = {Takahiro Gotow and Sachie Fujikawa and Hiroki Fujishiro and Mutsuo Ogura and W. H. Chang and Tetsuji Yasuda and Tatsuro Maeda},
  title = {Surface cleaning and pure nitridation of GaSb by in-situ plasma processing},
  journal = {AIP Advances},
  year = 2017,
}

@article{CTT100800231,
  author = {高木信一 and 安大煥 and 野口宗隆 and 後藤高寛 and 西康一 and 金閔洙 and 竹中充},
  title = {Ge/Ⅲ-Ⅴ 族半導体を用いたトンネル FET 技術},
  journal = {電子情報通信学会研究報告 信学技報},
  year = 2017,
}

@article{CTT100800229,
  author = {Takahiro Gotow and Sachie Fujikawa and Hiroki Fujishiro and Mutsuo Ogura and Tetsuji Yasuda and Tatsuro Maeda},
  title = {Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal–oxide–semiconductor structures},
  journal = {Japanese Journal of Applied Physics},
  year = 2015,
}

@article{CTT100800228,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {真空アニール法がAl2O3/GaSb MOS界面に与える影響},
  journal = {電子情報通信学会技術研究報告 信学技報},
  year = 2013,
}

@inproceedings{CTT100875027,
  author = {T. Gotow and T. Arai and T. Aota and Y. Miyamoto},
  title = {Evaluation of TMAH treatment for isolation process of N-polar GaN HEMTs},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100880230,
  author = {新井貴大 and 青田智也 and 眞壁勇夫 and 中田健 and 後藤高寛 and 宮本恭幸},
  title = {N極性GaN HEMTのTMAHによる素子分離},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875023,
  author = {Tomimasa Go and M. Kitamura and T. Gotow and Y. Miyamoto},
  title = {PMA Evaluation of TiN ALD in InGaAs Nanosheet MOSFETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875020,
  author = {T. Gotow and Tatsushi Suka and Y. Miyamoto},
  title = {Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100880231,
  author = {後藤高寛 and 須賀達士 and 宮本恭幸},
  title = {N極性およびGa極性GaN MIS構造の界面特性の比較検討},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875017,
  author = {Y. Miyamoto and T. Gotow},
  title = {Proposal of breakdown voltage control of GaN HEMT by interface charge},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100845767,
  author = {宮本恭幸 and 後藤高寛},
  title = {界面電荷量によるGaN HEMTの耐圧制御の提案},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100842580,
  author = {Tomoya Aota and Akihiro Hayasaka and isao makabe and Shigeki Yoshida and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100842581,
  author = {青田 智也 and 早坂 明泰 and 眞壁 勇夫 and 吉田 成輝 and 後藤 高寛 and 宮本 恭幸},
  title = {N極性GaN HEMT構造での無電極PECエッチング},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100822693,
  author = {毛利 匡裕 and 早坂 明泰 and 眞壁 勇夫 and 吉田 成輝 and 後藤 高寛 and 宮本 恭幸},
  title = {N極性GaN HEMT構造におけるコンタクト抵抗の低減},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100813385,
  author = {大澤幸希 and 岩木拓也 and 遠藤勇輝 and 平岡瑞穂 and 岸本尚之 and 林拓也 and 渡邊一世 and 山下良美 and 原紳介 and 後藤高寛 and 笠松章史 and 遠藤聡 and 藤代博記},
  title = {歪AlInSb/AlInSbステップバッファを用いたGaInSb n-チャネルHEMT},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100811767,
  author = {S. Takagi and K. Kato and D. H. Ahn and T. Gotow and R. Takaguchi and T.-E. Bae and K. Toprasertpong and M. Takenaka},
  title = {Tunneling FET Device Technology for Ultra-Low Power Integrated Circuits},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100806635,
  author = {平岡 瑞穂 and 遠藤 勇輝 and 岸本 尚之 and 林 拓也 and 剣持 雄太 and 町田 龍人 and 渡邊 一世 and 山下 良美 and 原 紳介 and 後藤 高寛 and 笠松 章史 and 遠藤 聡 and 藤代 博記},
  title = {Al0.40In0.60Sb/Al0.25In0.75Sbステップバッファを用いた歪Ga1-xInxSb量子井戸チャネルの電子輸送特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100806606,
  author = {岸本 尚之 and 熊坂 昂之輔 and 遠藤 勇輝 and 林 拓也 and 平岡 瑞穂 and 白井 脩策 and 吉田 直史 and 町田 龍人 and 渡邊 一世 and 山下 良美 and 原 紳介 and 後藤 高寛 and 笠松 章史 and 藤代 博記 and 遠藤 聡},
  title = {チャネルスケーリングがSb系HEMT構造の電子輸送特性に及ぼす影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100806609,
  author = {林 拓也 and 大坪 拓史 and 岸本 尚之 and 遠藤 勇輝 and 平岡 瑞穂 and 渡邊 一世 and 山下 良美 and 原 紳介 and 後藤 高寛 and 笠松 章史 and 遠藤 聡 and 藤代 博記},
  title = {歪超格子バッファがInSb HEMTの表面形態と電気的特性に与える影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100806632,
  author = {平岡 瑞穂 and 遠藤 勇輝 and 大澤 幸希 and 岸本 尚之 and 林 拓也 and 町田 龍人 and 渡邊 一世 and 山下 良美 and 原 紳介 and 後藤 高寛 and 笠松 章史 and 遠藤 聡 and 藤代 博記},
  title = {歪Al0.40In0.60Sb/Al1-yInySbステップバッファを用いたGa1-xInxSb量子井戸チャネルの電子輸送特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100811771,
  author = {K. Osawa and T. Iwaki and Y. Endoh and M. Hiraoka and N. Kishimoto and T. Hayashi and I. Watanabe and Y. Yamashita and S. Hara and A. Kasamatsu and T. Gotow and A. Endoh and H. I. Fujishiro},
  title = {GaInSb n-Channel HEMTs with High AlInSb Barrier},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100806640,
  author = {満原学 and 星拓哉 and 杉山弘樹 and 後藤高寛 and 竹中充 and 高木信一},
  title = {InP基板上引張歪GaAsSbとInGaAsの膜厚増加による結晶性劣化の比較},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100803036,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {Al2O3/GaSb MOS界面構造における絶縁膜堆積前処理の検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800806,
  author = {Shinichi Takagi and Kimihiko Kato and Wukang Kim and Kwangwon Jo and Ryo Matsumura and Ryotaro Takaguchi and Daehwan Ahn and Takahiro Gotow and Mitsuru Takenaka},
  title = {MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800804,
  author = {Takahiro Gotow and Manabu Mitsuhara and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Improvement of ION and S.S. values of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical TFETs by using abrupt source impurity profile},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800805,
  author = {Masashi Yamaguchi and Takahiro Gotow and Munetaka Noguchi and Mitsuru Takenaka and Shinichi Takagi},
  title = {Performance enhancement of Si MOSFETs using anti-ferroelectric thin films as gate insulators},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800807,
  author = {Shinichi Takagi and Kimihiko Kato and Ryotaro Takaguchi and Taeeon Bae and Daehwan Ahn and Takahiro Gotow and Mitsuru Takenaka},
  title = {Tunneling MOSFET technology for ultra-low power integrated system},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100803044,
  author = {山口大志 and 後藤高寛 and 竹中充 and 高木信一},
  title = {反強誘電体薄膜をゲート絶縁膜に用いたMOSFETの電気特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800802,
  author = {Shinichi Takagi and Daehwan Ahn and Munetaka Noguchi and Sanghee Yoon and Takahiro Gotow and Kouichi Nishi and Minsoo Kim and Taeeon Bae and Takumi Katoh and Ryo Matsumura and Ryotaro Takaguchi and Mitsuru Takenaka},
  title = {(invited) Low Power Tunneling FET Technologies Using Ge/IIIV Materials},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100800487,
  author = {Shinichi Takagi and Mengnan Ke and Chih-Yu Chang and Chiaki Yokoyama and Masafumi Yokoyama and Takahiro Gotow and Koichi Nishi and Sanghee Yoon and Mitsuru Takenaka},
  title = {(Invited) MOS Interface Defect Control in Ge/III-V Gate Stacks},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100800803,
  author = {Shinichi Takagi and Daehwan Ahn and Takahiro Gotow and Kouichi Nishi and Taeeon Bae and Takumi Katoh and Ryo Matsumura and Ryotaro Takaguchi and Kimihiko Kato and Mitsuru Takenaka},
  title = {III-V/Ge-based tunneling MOSFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100800788,
  author = {Shinichi Takagi and Daehwan Ahn and Takahiro Gotow and Munetaka Noguchi and Kouichi Nishi and SangHyeon Kim and Masafumi Yokoyama and Chih-Yu Chang and Sanghee Yoon and Chiaki Yokoyama and Mitsuru Takenaka},
  title = {III-V-based low power CMOS devices on Si platform},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100803043,
  author = {後藤高寛 and 満原学 and 星拓也 and 杉山弘樹 and 竹中充 and 高木信一},
  title = {ソース不純物濃度がGaAsSb/InGaAs 縦型トンネルFETの電気特性に与える影響},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100803041,
  author = {後藤高寛 and 満原学 and 星拓也 and 杉山弘樹 and 竹中充 and 高木信一},
  title = {極薄InGaAs界面層を有するGaAsSb MOS界面特性の評価},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100803042,
  author = {高木信一 and 安大煥 and 野口宗隆 and 後藤高寛 and 西康一 and 金閔洙 and 竹中充},
  title = {Ge/III-V 族化合物半導体を用いたトンネルFET技術},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100800782,
  author = {Shinichi Takagi and Daehwan Ahn and Munetaka Noguchi and Takahiro Gotow and Kouichi Nishi and Minsoo Kim and Mitsuru Takenaka},
  title = {Tunneling MOSFET technologies using III-V/Ge materials},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100800781,
  author = {Takahiro Gotow and Manabu Mitsuhara and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Improvement of GaAsSb MOS interface properties by using ultrathin InGaAs interfacial layers},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100800780,
  author = {Takahiro Gotow and Manabu Mitsuhara and Takuya Hoshi and Hiroki Sugiyama and Mitsuru Takenaka and Shinichi Takagi},
  title = {Effects of impurity and composition profile steepness on electrical characteristics of GaAsSb/InGaAs heterojunction TFETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100803040,
  author = {後藤高寛 and 満原学 and 星拓也 and 杉山弘樹 and 竹中充 and 高木信一},
  title = {極薄InGaAs界面層を有するGaAsSb MOS界面特性の評価},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100803039,
  author = {後藤高寛 and 満原学 and 星拓也 and 杉山弘樹 and 竹中充 and 高木信一},
  title = {GaAsSb/InGaAs 縦型トンネルFETの動作実証},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100803038,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {GaSb表面の純窒化プロセスの検討},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100803037,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {窒素プラズマ処理を施したAl2O3/GaSb MOS構造の特性評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100800769,
  author = {Takahiro Gotow and Sachie Fujikawa and Hiroki Fujishiro and Mutsuo Ogura and Tetsuji Yasuda and Tatsuro Maeda},
  title = {Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100803035,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {GaSbショットキー接合型メタルS/D pMOSFETsの動作実証},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100803034,
  author = {後藤高寛 and 藤川紗千恵 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {真空アニール法がAl2O3/GaSb MOS界面に与える影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100803033,
  author = {後藤高寛 and 原紳介 and 藤代博記 and 小倉睦郎 and 安田哲二 and 前田辰郎},
  title = {GaAs上GaSb MOS構造の作製},
  booktitle = {},
  year = 2013,
}