@article{CTT100918360,
  author = {An Li and Takuya Hoshii and Kazuo Tsutsui and Hitoshi Wakabayashi and Kuniyuki Kakushima},
  title = {Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}