@inproceedings{CTT100756056,
  author = {Ryo Ikoma and Takamasa Kawanago and Yukio Kawano},
  title = {Heavily-doped SOI with SAM-Based Gate Dielectrics in Application to TMDC FET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100756055,
  author = {居駒遼 and 川那子高暢 and 河野行雄},
  title = {剥離転写法による高濃度ドープSOI基板を用いたTMDC-FETの作製},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100737113,
  author = {川那⼦⾼暢 and 居駒遼 and Du Wanjing and ⼩⽥俊理},
  title = {⾃⼰組織化単分⼦膜を⽤いたadhesion lithographyによるMoS2 FETの作製},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100756054,
  author = {河野行雄 and 居駒遼 and 川那子高暢 and 小田俊理},
  title = {ジデシルホスホン酸(C12H25-PA)をゲート絶縁膜の用いたMoS2 FETの作製},
  booktitle = {},
  year = 2016,
}