@article{CTT100820790,
  author = {Shoichi Yoshitomi and Kentarou Yamanaka and Yusei Goto and Yuta Yokomura and Nobuhiko Nishiyama and Shigehisa Arai},
  title = {Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@inproceedings{CTT100782726,
  author = {Shoichi Yoshitomi and Kentarou Yamanaka and Yusei Goto and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100774699,
  author = {Yusei Goto and Shoichi Yoshitomi and Kentarou Yamanaka and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Optical-Response Analysis of Voltage-Modulated 1.3 μm Wavelength AlGaInAs/InP Transistor Laser},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100774742,
  author = {吉冨翔一 and 山中健太郎 and 後藤優征 and 西山伸彦 and 荒井滋久},
  title = {1.3 µm帯npn-AlGaInAs/InP トランジスタレーザの高温連続動作},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100774697,
  author = {後藤優征 and 吉冨翔一 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {キャリア変動による利得特性変化を考慮した電圧変調 1.3 μm帯npn-AlGaInAs/InP トランジスタレーザの大信号解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100774744,
  author = {Shoichi Yoshitomi and Kentarou Yamanaka and Yusei Goto and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {90 ℃ CW operation of  1.3-µm wavelength npn-AlGaInAs/InP transistor lasers by thick and wide base-electrode},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100758289,
  author = {吉冨翔一 and 山中健太郎 and 後藤優征 and 藤本直 and 西山伸彦 and 荒井滋久},
  title = {GRIN-SCH構造を有する1.3 µm帯npn-AlGaInAs/InP トランジスタレーザの静特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100758294,
  author = {後藤優征 and 山中健太郎 and 吉冨翔一 and 西山伸彦 and 荒井滋久},
  title = {1.3-µm帯npn-AlGaInAs/InP トランジスタレーザにおける 電気的応答を考慮した大信号特性の解析},
  booktitle = {},
  year = 2018,
}