@article{CTT100508735,
  author = {E.Tokumitsu and Y.Takano and H.Shibata and H.Saiki},
  title = {Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer},
  journal = {Journal of Microelectronic Engineering},
  year = 2007,
}

@inproceedings{CTT100658535,
  author = {Eisuke Tokumitsu and Etsu Shin and Hiroshi Shibata},
  title = {Asymmetry of switching time in oxide-channel ferroelectric-gate thin film transistors},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100555758,
  author = {徳光永輔 and 柴田宏 and 大岩朝洋 and 近藤洋平},
  title = {強誘電体および高誘電率材料をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタ},
  booktitle = {信学技報、SDM2008-11、OME2008-11(2008-4)},
  year = 2008,
}

@inproceedings{CTT100555760,
  author = {柴田宏 and 大岩朝洋 and 徳光永輔},
  title = {酸化物チャネル強誘電体ゲート不揮発性メモリ素子の作製と評価},
  booktitle = {信学技報、SDM2007-274(2008-03)},
  year = 2008,
}

@inproceedings{CTT100566233,
  author = {柴田宏 and 大岩朝洋 and 徳光永輔},
  title = {酸化物半導体InGaZnO膜の強誘電体ゲート薄膜トランジスタへの適用},
  booktitle = {第５５回 応用物理学関係連合会講演会 講演予稿集},
  year = 2008,
}

@inproceedings{CTT100604740,
  author = {柴田宏 and 大岩朝洋 and 徳光永輔},
  title = {酸化物チャネル強誘電体ゲートトランジスタにおけるメモリ特性},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100547471,
  author = {E.Tokumitsu and H.Shibata and M.Senoo},
  title = {Nonvolatile memory operetaion of ferroelectric-gate thin film transistors using oxide channel},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544540,
  author = {高野 友一 and 斎木博和 and 柴田宏 and 徳光永輔},
  title = {金属／絶縁体／強誘電体／絶縁体／半導体構造（M-I-FIS構造）キャパシタの作製と評価},
  booktitle = {},
  year = 2007,
}