@article{CTT100855475,
  author = {Jinhan Song and Atsuhiro Ohta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@inproceedings{CTT100855928,
  author = {"Atsuhiro Ohta and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima"},
  title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829168,
  author = {宋 ジンハン and 太田 惇丈 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829171,
  author = {太田 惇丈 and 宋 禛漢 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {原子層堆積法を用いたイットリウムシリケート薄膜の形成},
  booktitle = {},
  year = 2019,
}