@article{CTT100614546, author = {Eisuke Tokumitsu and Tomohiro Oiwa}, title = {Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors}, journal = {Mater. Res. Soc. Symp. Proc.}, year = 2010, } @inproceedings{CTT100608095, author = {Eisuke Tokumitsu and Youhei Kondo and Tomohiro Oiwa}, title = {Preparation of Bi-Zn-Nb-O(BZN)High-K Gate insulator by Sputtering for Oxide Channel Thin Film Transistors}, booktitle = {}, year = 2010, } @inproceedings{CTT100598398, author = {Eisuke Tokumitsu and Ken-ichi Haga and Tomohiro Oiwa}, title = {Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors}, booktitle = {}, year = 2010, } @inproceedings{CTT100592041, author = {羽賀健一 and 大岩朝洋 and 徳光永輔}, title = {IGZOおよびIn2O3をチャネルに用いた強誘電体ゲートTFTの作製}, booktitle = {}, year = 2009, } @inproceedings{CTT100588559, author = {E. Tokumitsu and T. Oiwa}, title = {Fabrication of In-Ga-Zn-O channel thin film transistors with high-k and ferroelectric gate insulators}, booktitle = {}, year = 2009, } @inproceedings{CTT100574794, author = {近藤洋平 and 大岩朝洋 and 羽賀健一 and 徳光永輔}, title = {Bi1.5Zn1.0b1.5O7をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタの作製}, booktitle = {第56回 応用物理学関係連合会講演会}, year = 2009, } @inproceedings{CTT100572241, author = {Eisuke Tokumitsu and Tomohiro Oiwa}, title = {Transmission Electron Microscope Observation of ITO/(Bi,La)4Ti3O12 TFT Structures}, booktitle = {The Proceedings of the 5th International thin Transistor Conference}, year = 2009, } @inproceedings{CTT100570101, author = {Tomohiro Oiwa and Youhei Kondo and Mitsuru Nakata and Eisuke Tokumitsu}, title = {Fabrication of IGZO Channel Thin Film Transistor with BZN Gate Insulator}, booktitle = {}, year = 2008, } @inproceedings{CTT100572293, author = {大岩朝洋 and 近藤洋平 and 中田充 and 徳光永輔}, title = {強誘電体・高誘電率材料をゲート絶縁膜に用いたIGZOチャネル薄膜トランジスタの作製と評価}, booktitle = {2008年秋季 第69回応用物理学会学術講演会 講演予稿集}, year = 2008, } @inproceedings{CTT100566230, author = {Eisuke Tokumitsu and Tomohiro Oiwa and Yohei Kondo and Masaru Senoo}, title = {All-Oxide Transparent Thin Film Transistors with and without Nonvolatile Memory Function}, booktitle = {}, year = 2008, } @inproceedings{CTT100555758, author = {徳光永輔 and 柴田宏 and 大岩朝洋 and 近藤洋平}, title = {強誘電体および高誘電率材料をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタ}, booktitle = {信学技報、SDM2008-11、OME2008-11(2008-4)}, year = 2008, } @inproceedings{CTT100566233, author = {柴田宏 and 大岩朝洋 and 徳光永輔}, title = {酸化物半導体InGaZnO膜の強誘電体ゲート薄膜トランジスタへの適用}, booktitle = {第55回 応用物理学関係連合会講演会 講演予稿集}, year = 2008, } @inproceedings{CTT100604740, author = {柴田宏 and 大岩朝洋 and 徳光永輔}, title = {酸化物チャネル強誘電体ゲートトランジスタにおけるメモリ特性}, booktitle = {}, year = 2008, } @inproceedings{CTT100555760, author = {柴田宏 and 大岩朝洋 and 徳光永輔}, title = {酸化物チャネル強誘電体ゲート不揮発性メモリ素子の作製と評価}, booktitle = {信学技報、SDM2007-274(2008-03)}, year = 2008, }