@article{CTT100800893,
  author = {R. Aonuma and N. Kise and Y. Miyamoto},
  title = {GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature},
  journal = {Jpn. J. Appl. Phys.},
  year = 2019,
}

@inproceedings{CTT100822692,
  author = {早坂 明泰 and 青沼 遼介 and 堀田 航史 and 金井 七重 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
  title = {N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800936,
  author = {A. Hayasaka and R. Aonuma and K. Hotta and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {N-polar GaN HEMT with Al2O3 gate insulator},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800846,
  author = {早坂 明泰 and 青沼 遼介 and 堀田 航史 and 眞壁 勇夫 and 吉田 成輝 and 宮本 恭幸},
  title = {Al2O3ゲート絶縁膜を持つN極性GaN HEMT},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800934,
  author = {Y. Miyamoto and N. Kise and R. Aonuma},
  title = {GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800851,
  author = {青沼 遼介 and 木瀬 信和 and 宮本 恭幸},
  title = {Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800928,
  author = {R. Aonuma and N. Kise and Y. Miyamoto},
  title = {Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768825,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryosuke Aonuma and Yasuyuki Miyamoto},
  title = {Fabrication of InGaAs Nanosheet Transistors with Regrown Source},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100759540,
  author = {金澤 徹 and 大澤 一斗 and 雨宮 智宏 and 木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
  title = {InGaAsナノシートトランジスタの作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800884,
  author = {木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
  title = {GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100752196,
  author = {木瀬 信和 and 岩田 真次郎 and 青沼 遼介 and 宮本 恭幸},
  title = {[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752746,
  author = {N. Kise and S. Iwata and R. Aonuma and K. Ohsawa and Y. Miyamoto},
  title = {GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740070,
  author = {岩田 真次郎 and 木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
  title = {[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738888,
  author = {青沼遼介 and 岩田真次郎 and 木瀬信和 and 宮本恭幸},
  title = {68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}