@article{CTT100547843,
  author = {松浦 哲也 and 宮本 智之 and 小山 二三夫},
  title = {GaInAsSbカバー層を有するInAs量子ドットの面発光型デバイス応用に向けた面内偏光特性の検討},
  journal = {電子情報通信学会論文誌},
  year = 2007,
}

@article{CTT100507285,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tetsuya Matsuura and Fumio Koyama},
  title = {Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition},
  journal = {Jpn. J. Appl. Phys.},
  year = 2006,
}

@article{CTT100507284,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Fumio Koyama},
  title = {Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant},
  journal = {Appl. Phys. Lett.},
  year = 2006,
}

@article{CTT100507281,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Masataka Ohta and Fumio Koyama},
  title = {Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE},
  journal = {Physica Status Solidi},
  year = 2006,
}

@article{CTT100507280,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tetsuya Matsuura and Fumio Koyama},
  title = {InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition},
  journal = {Physica Status Solidi},
  year = 2006,
}

@article{CTT100507282,
  author = {Masataka Ohta and Tomoyuki Miyamoto and Tetsuya Matsuura and Yasutaka Matsui and Tatsuya Furuhata and Takahiro Iwasaki and Yoshihiro Kashihara and Fumio Koyama},
  title = {Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range},
  journal = {Physica Status Solidi},
  year = 2006,
}

@article{CTT100507278,
  author = {Masataka Ohta and Tatsuya Furuhata and Takahiro Iwasaki and Tetsuya Matsuura and Yoshihiro Kashihara and Tomoyuki Miyamoto and Fumio Koyama},
  title = {Structure-dependent lasing characteristics of tunnel injection GaInAs/AlGaAs single-quantum well lasers},
  journal = {Jpn. J. Appl. Phys.},
  year = 2006,
}

@article{CTT100646531,
  author = {MASATAKA OHTA and Tomoyuki Miyamoto and Takeo Kageyama and TETSUYA MATSUURA and Yasutaka Matsui and Tatsuya Furuhata and FUMIO KOYAMA},
  title = {Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy},
  journal = {J. Crystal Growth},
  year = 2005,
}

@article{CTT100692059,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Masataka Ohta and Yasutaka Matsui and Tatsuya Furuhata and Fumio Koyama},
  title = {PL characteristics of InAs quantum dots with Sb irradiation in growth interruption},
  journal = {J. Crystal Growth},
  year = 2005,
}

@article{CTT100646362,
  author = {MASATAKA OHTA and Tomoyuki Miyamoto and TETSUYA MATSUURA and Yasutaka Matsui and Tatsuya Furuhata and FUMIO KOYAMA},
  title = {Optical quality dependence on growth rate for solid-source MBE grown highly-strained GaInAsSb/GaAs QWs},
  journal = {Jpn. J. Appl. Phys.},
  year = 2004,
}

@article{CTT100646375,
  author = {Takeo Kageyama and Tomoyuki Miyamoto and MASATAKA OHTA and TETSUYA MATSUURA and Yasutaka Matsui and Tatsuya Furuhata and FUMIO KOYAMA},
  title = {Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm-range grown by molecular beam epitaxy},
  journal = {J. Appl. Phys.},
  year = 2004,
}

@article{CTT100692032,
  author = {TETSUYA MATSUURA and Tomoyuki Miyamoto and Takeo Kageyama and MASATAKA OHTA and Yasutaka Matsui and Tatsuya Furuhata and FUMIO KOYAMA},
  title = {Surfactant effect of Sb on GaInAs quantum dots grown by molecular beam epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2004,
}

@article{CTT100646379,
  author = {TETSUYA MATSUURA and Tomoyuki Miyamoto and Shigeki Makino and MASATAKA OHTA and Yasutaka Matsui and FUMIO KOYAMA},
  title = {P-type doping characteristics of GaInNAs:Be grown by solid source molecular beam epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2004,
}

@article{CTT100398570,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Shigeki Makino and Masataka Ohta and Yasutaka Matsui and Fumio Koyama},
  title = {p-type doping characteristics of GaInNAs:Be grown by solid source molecular beam epitaxy},
  journal = {Japanese Journal of Applied Physics},
  year = 2004,
}

@article{CTT100692182,
  author = {TETSUYA MATSUURA and Tomoyuki Miyamoto and Takeo Kageyama and MASATAKA OHTA and Yasutaka Matsui and FUMIO KOYAMA},
  title = {Elongation of emission wavelength of GaInAsSb-covered (Ga)InAs quantum dots grown by molecular beam epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2004,
}

@article{CTT100645950,
  author = {Tomoyuki Miyamoto and Masataka Ohta and Tetsuya Matsuura and Yasuhisa Matsui and Fumio Koyama},
  title = {Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy},
  journal = {Physica Status Solidi},
  year = 2003,
}

@inproceedings{CTT100547914,
  author = {中島浩 and 宮本智之 and 岩崎鷹博 and 比嘉康貴 and 松浦哲也 and 小山二三夫},
  title = {理論解析を基にしたトンネル注入レーザの発振特性の検討},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100507336,
  author = {宮本智之 and 松浦哲也 and 鈴木亮一郎},
  title = {"N,Sbを添加したInAs系量子ドットの形成特性と光学特性"},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507337,
  author = {松浦哲也 and 宮本智之 and 小山二三夫},
  title = {Ga(In)AsSbカバー層を有するInAs量子ドットの偏光依存性II},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507327,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Fumio Koyama},
  title = {Polarization characteristics of Sb-introduced Ga(In)As covered InAs quantum dots},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507328,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and Tetsuya Matsuura and Fumio Koyama},
  title = {Wavelength elongation and improved emission efficiency of InAs quantum dots on GaNAs buffer layer},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507332,
  author = {柏原吉浩 and 宮本智之 and 松浦哲也 and 太田征孝 and 岩崎鷹博 and 小山二三夫},
  title = {MBE法によるGaAsSb量子井戸の成長条件の検討},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507334,
  author = {鈴木亮一郎 and 宮本智之 and 松浦哲也 and 小山二三夫},
  title = {GaNAsバッファ層を有するInAs量子ドットの偏光依存性},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100507333,
  author = {松浦哲也 and 宮本智之 and 小山二三夫},
  title = {Ga(In)AsSbカバー層を有するInAs量子ドットの偏光依存性},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100398777,
  author = {TETSUYA MATSUURA and Tomoyuki Miyamoto and MASATAKA OHTA and FUMIO KOYAMA},
  title = {Photoluminescence Characterization of (Ga)InAs Quantum Dots with GaInAsSb Cover Layer Grown by MBE},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398793,
  author = {太田征孝 and 宮本智之 and 岩崎鷹博 and 古旗達也 and 松浦哲也 and 柏原吉浩 and 小山二三夫},
  title = {トンネル注入構造における透過スペクトルのレーザ特性への影響},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398795,
  author = {太田征孝 and 宮本智之 and 松浦哲也 and 岩崎鷹博 and 柏原吉浩 and 小山二三夫},
  title = {異なる井戸幅の同一波長GaInAs量子井戸レーザ特性の比較},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398799,
  author = {松浦哲也 and 宮本智之 and 太田征孝 and 小山二三夫},
  title = {(Ga)InAs/GaInAsSb量子ドットの成長条件・構造依存性},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398800,
  author = {鈴木亮一郎 and 宮本智之 and 松浦哲也 and 小山二三夫},
  title = {GaNAsバッファ層上におけるInAs量子ドットの形成},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398778,
  author = {MASATAKA OHTA and Tatsuya Furuhata and TETSUYA MATSUURA and Yasutaka Matsui and Tomoyuki Miyamoto and FUMIO KOYAMA},
  title = {MBE Growth of High Quality Highly Strained GaInAs/GaAs QWs for 1200nm Lasers},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398572,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Masataka Ohta and Fumio Koyama},
  title = {Photoluminescence Characterization of (Ga)InAs Quantum Dots with GaInAsSb Cover Layer Grown by MBE},
  booktitle = {Fraunhofer IAF},
  year = 2005,
}

@inproceedings{CTT100398779,
  author = {Ryoichiro Suzuki and Tomoyuki Miyamoto and TETSUYA MATSUURA and FUMIO KOYAMA},
  title = {InAs Quantum Dot formed on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398579,
  author = {松浦哲也 and 宮本智之 and 太田征孝 and 小山二三夫},
  title = {(Ga)InAs/GaInAsSb量子ドットの成長条件・構造依存性},
  booktitle = {応用物理学会},
  year = 2005,
}

@inproceedings{CTT100398581,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Masataka Ohta and Fumio Koyama},
  title = {Growth Characteristics of Sb-introduced InAs/GaInAs Quantum Dots Grown by Molecular Beam Epitaxy},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398776,
  author = {MASATAKA OHTA and Tomoyuki Miyamoto and TETSUYA MATSUURA and Yasutaka Matsui and Tatsuya Furuhata and Takahiro Iwasaki and Yoshihiro Kashihara and FUMIO KOYAMA},
  title = {Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398774,
  author = {TETSUYA MATSUURA and Tomoyuki Miyamoto and MASATAKA OHTA and FUMIO KOYAMA},
  title = {Topological Characteristics of MBE Grown Sb-Introduced Ga(In)As Covered InAs Quantum Dots on GaAs},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398573,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Masataka Ohta and Fumio Koyama},
  title = {Topological Characteristics of MBE Grown Sb-Introduced Ga(In)As Covered InAs Quantum Dots on GaAs},
  booktitle = {IEEE},
  year = 2005,
}

@inproceedings{CTT100398792,
  author = {太田征孝 and 宮本智之 and 松浦哲也 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {MBE法による低成長速度の高歪GaInAs量子井戸のPL特性改善},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100541091,
  author = {松浦哲也 and 宮本智之 and 太田征孝 and 小山二三夫},
  title = {Sb導入によるInAs量子ドット形状への影響(II)},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398788,
  author = {松井康尚 and 宮本智之 and 太田征孝 and 松浦哲也 and 古旗達也 and 小山二三夫},
  title = {三種材料による量子カスケードレーザの波長制御性向上},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100398791,
  author = {古旗達也 and 宮本智之 and 太田征孝 and 松浦哲也 and 松井康尚 and 小山二三夫},
  title = {GaInAs系トンネル注入レーザにおける発振特性のトンネル構造依存性},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100692168,
  author = {太田征孝 and 宮本智之 and 松浦哲也 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {固体原料MBE法での低成長速度による高歪GaInAsSb量子井戸PL特性の改善},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100398587,
  author = {松浦哲也 and 宮本智之 and 太田征孝 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {Sb導入によるInAs量子ドット形成特性への影響},
  booktitle = {応用物理学会},
  year = 2004,
}

@inproceedings{CTT100691985,
  author = {松浦哲也 and 宮本智之 and 太田征孝 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {Sb導入によるInAs量子ドット形状への影響},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100692122,
  author = {宮本智之 and 松浦哲也 and 太田征孝 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {GaInAs量子ドットへのSb添加効果},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100692058,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Masataka Ohta and Yasutaka Matsui and Tatsuya Furuhata and Fumio Koyama},
  title = {PL Characteristics of InAs Quantum Dots with Sb Irradiation in Growth Interruption},
  booktitle = {The 13th International Conference on Molecular Beam Epitaxy 2004},
  year = 2004,
}

@inproceedings{CTT100692055,
  author = {MASATAKA OHTA and Tomoyuki Miyamoto and TETSUYA MATSUURA and Yasutaka Matsui and Tatsuya Furuhata and FUMIO KOYAMA},
  title = {Lasing characteristics of highly-strained thin GaInAs/GaAs multiple quantum well lasers},
  booktitle = {OptoElectronics and Communications Conference/International Conference on Optical Internet},
  year = 2004,
}

@inproceedings{CTT100692180,
  author = {TETSUYA MATSUURA and Tomoyuki Miyamoto and MASATAKA OHTA and Yasutaka Matsui and Tatsuya Furuhata and FUMIO KOYAMA},
  title = {Wavelength elongation of MBE grown (GaInAs )QD by GaInAsSb cover layer},
  booktitle = {International Conference on Indium Phosphide and Related Materials},
  year = 2004,
}

@inproceedings{CTT100692073,
  author = {松浦哲也 and 宮本智之 and 太田征孝 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {成長中断におけるInAs量子ドットへのSb照射},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100692155,
  author = {太田征孝 and 宮本智之 and 松浦哲也 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {薄膜高歪GaInAs/GaAs量子井戸レーザの井戸層多層化の検討},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100493980,
  author = {TETSUYA MATSUURA and Tomoyuki Miyamoto and Takeo Kageyama and MASATAKA OHTA and Yasutaka Matsui and FUMIO KOYAMA},
  title = {Surfactant effect of Sb for GaInAs quantum dots grown by molecular beam epitaxy},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100398578,
  author = {Tetsuya Matsuura and Tomoyuki Miyamoto and Takeo Kageyama and Masataka Ohta and Yasutaka Matsui and Tatsuya Furuhata and Fumio Koyama},
  title = {Surfactant Effect of Sb for GaInAs Quantum Dots Grown by Molecular Beam Epitaxy},
  booktitle = {University of Tokyo},
  year = 2003,
}

@inproceedings{CTT100493981,
  author = {影山健生 and 宮本智之 and 太田征孝 and 松浦哲也 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {波長1200nm帯高歪GaInAsSb/GaAs量子井戸構造の固体原料MBE成長},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100691917,
  author = {松浦哲也 and 宮本智之 and 影山健生 and 太田征孝 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {MBE法によるGaInAs量子ドットへのSb添加の影響},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100493983,
  author = {太田征孝 and 宮本智之 and 影山健生 and 松浦哲也 and 松井康尚 and 古旗達也 小山二三夫},
  title = {GaInAs量子井戸レーザ特性の井戸幅及びIn組成依存性},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100493982,
  author = {影山健生 and 宮本智之 and 太田征孝 and 松浦哲也 and 松井康尚 and 古旗達也 and 小山二三夫},
  title = {MBE成長GaInNAs量子井戸に対するアニール効果の成長条件依存性},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100661928,
  author = {FUMIO KOYAMA and MASATAKA OHTA and Takeo Kageyama and TETSUYA MATSUURA and Yasutaka Matsui and Tatsuya Furuhata and Tomoyuki Miyamoto},
  title = {Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100692181,
  author = {MASATAKA OHTA and Tomoyuki Miyamoto and Shigeki Makino and TETSUYA MATSUURA and Yasutaka Matsui and FUMIO KOYAMA},
  title = {Investigation of well thickness reduction effect of GaInNAs/GaAs quantum well lasers},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100485208,
  author = {Shigeki Makino and Tomoyuki Miyamoto and Masataka Ohta and Tetsuya Matsuura and Yasutaka Matsui and Fumio Koyama},
  title = {Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100398602,
  author = {松浦哲也 and 宮本智之 and 牧野茂樹 and 太田征孝 and 松井康尚 and 小山二三夫},
  title = {MBE法によるGa(In)NAsのドーピング特性とコンタクト層への応用},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100691948,
  author = {太田征孝 and 宮本智之 and 牧野茂樹 and 松浦哲也 and 松井康尚 and 小山二三夫},
  title = {Ga(In)NAs光閉じ込め層とGaAsクラッド層による放熱性に優れた長波長帯レーザ構造の検討},
  booktitle = {第50回応用物理学関連連合講演会},
  year = 2003,
}

@inproceedings{CTT100692092,
  author = {松浦哲也 and 宮本智之 and 牧野茂樹 and 太田征孝 and 松井康尚 and 小山二三夫},
  title = {MBE法によるGaIn(N)Asのドーピング特性とコンタクト層への応用},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100477101,
  author = {Shigeki Makino and Tomoyuki Miyamoto and MASATAKA OHTA and TETSUYA MATSUURA and Yasuhisa Matsui and FUMIO KOYAMA},
  title = {Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy},
  booktitle = {},
  year = 2002,
}

@inproceedings{CTT100692172,
  author = {太田征孝 and 宮本智之 and 牧野茂樹 and 松浦哲也 and 松井康尚 and 小山二三夫},
  title = {GaInNAs/GaAs量子井戸薄膜化による利得特性の向上},
  booktitle = {},
  year = 2002,
}

@inproceedings{CTT100692084,
  author = {牧野茂樹 and 宮本智之 and 太田征孝 and 松浦哲也 and 小山二三夫},
  title = {CBE成長した自己形成GaInNAs量子ドットに対する熱アニール効果},
  booktitle = {},
  year = 2002,
}

@misc{CTT100594036,
  author = {TETSUYA MATSUURA},
  title = {分子ビーム成長法による1.5μm帯GaInAsSb系量子ドット形成とレーザ応用に関する研究},
  year = 2004,
}



@mastersthesis{CTT100594036,
  author = {TETSUYA MATSUURA},
  title = {分子ビーム成長法による1.5μm帯GaInAsSb系量子ドット形成とレーザ応用に関する研究},
  school = {東京工業大学},
  year = 2004,
}