@article{CTT100800921,
  author = {Y. Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and K. Ohsawa},
  title = {Regrown Source/Drain in InGaAs Multi-Gate MOSFETs},
  journal = {J. Crystal Growth},
  year = 2019,
}

@article{CTT100738837,
  author = {K. Ohsawa and S. Netsu and N. Kise and S. Noguchi and Y. Miyamoto},
  title = {Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks},
  journal = {Jpn. J. Appl. Phys.},
  year = 2017,
}

@article{CTT100678925,
  author = {K. Ohsawa and A. Kato and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with InP source for high current density},
  journal = {IEICE Electronics Express},
  year = 2014,
}

@inproceedings{CTT100800923,
  author = {Y.Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and Kazuto Ohsawa},
  title = {Regrown Source / Drain in InGaAs Multi-Gate MOSFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768825,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryosuke Aonuma and Yasuyuki Miyamoto},
  title = {Fabrication of InGaAs Nanosheet Transistors with Regrown Source},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100759540,
  author = {金澤 徹 and 大澤 一斗 and 雨宮 智宏 and 木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
  title = {InGaAsナノシートトランジスタの作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100747615,
  author = {⼤澤 ⼀⽃ and ⾦澤 徹 and ⽊瀬 信和 and ⾬宮 智宏 and 宮本 恭幸},
  title = {InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752746,
  author = {N. Kise and S. Iwata and R. Aonuma and K. Ohsawa and Y. Miyamoto},
  title = {GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740854,
  author = {大澤 一斗 and 野口 真司 and 祢津 誠晃 and 木瀬 信和 and 宮本 恭幸},
  title = {[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740944,
  author = {大澤一斗 and 野口真司 and 祢津誠晃 and 木瀬信和 and 宮本恭幸},
  title = {HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響},
  booktitle = {信学技報},
  year = 2017,
}

@inproceedings{CTT100740907,
  author = {大澤 一斗 and 木瀬 信和 and 宮本 恭幸},
  title = {15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740976,
  author = {K. Ohsawa and N. Kise and Y. Miyamoto},
  title = {Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100721938,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata},
  title = {InGaAs channel for low supply voltage},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721886,
  author = {K. Ohsawa and Y. Mishima and Y. Miyamoto},
  title = {Operation of 13-nm channel length InGaAs-MOSFET with n-InP source},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693237,
  author = {大澤 一斗 and 三嶋 裕一 and 宮本 恭幸},
  title = {InGaAs-MOSFETのチャネル長微細化に関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693229,
  author = {宮本恭幸 and 金澤 徹 and 米内義晴 and 加藤 淳 and 藤松基彦 and 柏野壮志 and 大澤一斗 and 大橋一水},
  title = {低電圧/高速動作にむけたInGaAs MOSFETソース構造},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100679169,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and T. Irisawa and M. Oda and T. Tezuka},
  title = {(Invited) Growth Process for High Performance of InGaAs MOSFETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679167,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and M. Fujimatsu and M. Kashiwano and K. Ohsawa and K. Ohashi},
  title = {(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679165,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and K. Ohsawa and M. Oda and T. Irisawa and T. Tezuka},
  title = {Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679172,
  author = {大澤一斗 and 加藤淳 and 佐賀井健 and 金澤徹 and 上原英治 and 宮本恭幸},
  title = {高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678939,
  author = {K. Ohsawa and A. Kato and T. Sagai and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659772,
  author = {佐賀井 健 and 上原 英治 and 大澤 一斗 and 宮本 恭幸},
  title = {n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性},
  booktitle = {},
  year = 2013,
}