@article{CTT100848807,
  author = {Ryo Wakabayashi and Kohei Yoshimatsu and Mai Hattori and Jung-Soo Lee and Osami Sakata and Akira Ohtomo},
  title = {Epitaxial Stabilization of Complete Solid-solution β-(AlxGa1–x)2O3 (100) Films by Pulsed-laser Deposition},
  journal = {Cryst. Growth Des.},
  year = 2021,
}

@article{CTT100768556,
  author = {Ryo Wakabayashi and Mai Hattori and Kohei Yoshimatsu and Koji Horiba and Hiroshi Kumigashira and Akira Ohtomo},
  title = {Band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 (100) interface fabricated},
  journal = {Applied Physics Letters},
  year = 2018,
}

@article{CTT100754352,
  author = {Ryo Wakabayashi and K. Yoshimatsu and Mai Hattori and A. Ohtomo},
  title = {Epitaxial structure and electronic property of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> films grown on MgO (100) substrates by pulsed-laser deposition},
  journal = {Applied Physics Letters},
  year = 2017,
}

@article{CTT100738894,
  author = {T. Oshima and R. Wakabayashi and M. Hattori and Akihiro Hashiguchi and Naoto Kawano and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo and Toshiyuki Oishi and Makoto Kasu},
  title = {Formation of indium–tin oxide ohmic contacts for β-Ga<sub>2</sub>O<sub>3</sub>},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100727003,
  author = {Mai Hattori and Takayoshi OSHIMA and Ryo Wakabayashi and K. Yoshimatsu and Kohei Sasaki and Takekazu Masui and Akito Kuramata and Shigenobu Yamakoshi and Koji Horiba and Hiroshi Kumigashira and A. Ohtomo},
  title = {Epitaxial growth and electric properties of γ-Al<sub>2</sub>O<sub>3</sub> (110) films on β- Ga<sub>2</sub>O<sub>3</sub> (010) substrates},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100690808,
  author = {R. Wakabayashi and T. Oshima and M. Hattori and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Oxygen-radical-assisted pulsed-laser deposition of β-Ga<sub>2</sub>O<sub>3</sub> and β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> films},
  journal = {Journal of Crystal Growth},
  year = 2015,
}

@inproceedings{CTT100799546,
  author = {Takumi Saito and Ryo Wakabayashi and Jung-Soo Lee and Kaisei Kamei and Kohei Yoshimatsu and Motohisa Kado and Akira Ohtomo},
  title = {Suppression of Parallel Conduction at the Interface in β-Ga2O3 Homoepitaxial Layer Using Semi-Insulating Intermediate Layer},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100799545,
  author = {Jung-Soo Lee and Ryo Wakabayashi and Takumi Saito and Kohei Yoshimatsu and Motohisa Kado and Akira Ohtomo},
  title = {High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100796055,
  author = {斉藤 拓海 and 若林 諒 and 李 政洙 and 亀井 海聖 and 吉松 公平 and 加渡Kado and 大友 明},
  title = {半絶縁性中間層によるβ-Ga2O3ホモエピタキシャル層の界面伝導の抑制},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100796052,
  author = {李 政洙 and 若林 諒 and 斉藤 拓海 and 吉松 公平 and 加渡Kado and 大友 明},
  title = {PLD法による窒素ドープ酸化ガリウム薄膜の成長と電気特性評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100780458,
  author = {若林 諒 and 吉松 公平 and 大友 明},
  title = {PLD法によるβ-(Ga1-yScy)2O3薄膜成長とバンドギャップ変調},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100761123,
  author = {李政洙 and 若林諒 and 吉松 公平 and 大友 明},
  title = {ウェットエチングを用いた<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>(100)基板表面のSi不純物除去},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100767001,
  author = {服部真依 and 若林諒 and 佐々木公平 and 増井建和 and 倉又朗人 and 山腰茂伸 and 堀場弘司 and 組頭広志 and 吉松公平 and 大友明},
  title = {β-Ga203(100)上に成長したβ-(AlxGal-x)203薄膜のバンドギャップ評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100761125,
  author = {若林 諒 and 吉松 公平 and 大友 明},
  title = {新規ワイドギャップ混晶半導体<i>β</i>-(Ga<sub>1-y</sub>Sc<sub>y</sub>)2O<sub>3</sub>},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100753353,
  author = {R. Wakabayashi and M. Hattori and K. Yoshimatsu and Koji Horiba and Hiroshi Kumigashira and A. Ohtomo},
  title = {Growth of β-Ga<sub>2</sub>O<sub>3</sub> -based heterostructures by pulsed-laser deposition},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100751825,
  author = {若林諒 and 服部真依 and 吉松 公平 and 大友 明},
  title = {全Al組成β -(Al<sub>x</sub> Ga<sub>1-x</sub> )<sub>2</sub>O<sub>3</sub> (0 ≤ x ≤ 1)薄膜のエピタキシャル成⻑},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100767000,
  author = {若林諒 and 吉松公平 and 大友明},
  title = {MgO(100)基板上のβ-Ga203:Si(100)薄膜の低温成長},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100715619,
  author = {大島孝仁 and 若林諒 and 服部真依 and 橋口 明広 and 河野 直士 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {β-Ga<sub>2</sub>O<sub>3</sub>用ITOオーミック電極},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100719033,
  author = {T. Oshima and R. Wakabayashi and M. Hattori and Akihiro Hashiguchi and Naoto Kawano and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo and Toshiyuki Oishi and Makoto Kasu},
  title = {ITO ohmic contacts for β-Ga<sub>2</sub>O<sub>3</sub>},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100718972,
  author = {R. Wakabayashi and K. Yoshimatsu and A. Ohtomo},
  title = {Low-temperature growth of  β-Ga<sub>2</sub>O<sub>3</sub>:Si (100) films on MgO (100) substrates},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100698657,
  author = {R. Wakabayashi and T. Oshima and M. Hattori and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Strong Fermi-Level Pinning at Metal/β-Ga<sub>2</sub>O<sub>3</sub> (̅201) Interface},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100698689,
  author = {M. Hattori and R. Wakabayashi and T. Oshima and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Evaluation of Band Offset at β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Heterointerface},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100698688,
  author = {M. Hattori and T. Oshima and R. Wakabayashi and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Epitaxial Relationship and Capacitance-Voltage Characteristicsof γ-Al<sub>2</sub>O<sub>3</sub> Films Grown on (010) β-Ga<sub>2</sub>O<sub>3</sub> Substrates},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100698656,
  author = {R. Wakabayashi and T. Oshima and M. Hattori and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Growth and Electric Properties of Conductive β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> Films},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100696498,
  author = {服部 真依 and 大島 孝仁 and 若林 諒 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {β-Ga<sub>2</sub>O<sub>3</sub>上γ-Al<sub>2</sub>O<sub>3</sub>膜のエピタキシャル構造と容量電圧特性評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100696497,
  author = {若林 諒 and 大島 孝仁 and 服部 真依 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {金属/β-Ga<sub>2</sub>O<sub>3</sub> (̅201)界面における強いフェルミ準位ピンニング効果},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693223,
  author = {大島 孝仁 and 服部 真依 and 若林 諒 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 堀場 弘司 and 組頭 広志 and 吉松 公平 and 大友 明},
  title = {β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub>ヘテロ接合におけるタイプI型バンドラインナップ},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693226,
  author = {若林 諒 and 大島 孝仁 and 服部 真依 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {酸素ラジカル支援パルスレーザ堆積法による酸化ガリウム系混晶薄膜の成長},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100685941,
  author = {若林 諒 and 服部 真依 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {酸素ラジカル支援PLD法による酸化ガリウム系混晶薄膜の成長},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100685942,
  author = {服部 真依 and 若林 諒 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 堀場 弘司 and 組頭 広志 and 吉松 公平 and 大友 明},
  title = {β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub>/ヘテロ接合のバンドオフセット評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100680941,
  author = {R. Wakabayashi and M. Hattori and T. Oshima and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Oxygen-radical-assisted pulsed-laser deposition of β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> alloy films},
  booktitle = {},
  year = 2014,
}

@misc{CTT100788481,
  author = {若林諒},
  title = {酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究},
  year = 2019,
}

@misc{CTT100826718,
  author = {若林諒},
  title = {酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究},
  year = 2019,
}

@misc{CTT100788480,
  author = {若林諒},
  title = {酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究},
  year = 2019,
}

@misc{CTT100788482,
  author = {若林諒},
  title = {酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究},
  year = 2019,
}

@misc{CTT100840046,
  author = {大友明 and 若林諒 and 李政洙 and 加渡　幹尚　},
  title = {酸化ガリウムの製造方法},
  howpublished = {登録特許},
  year = 2022,
  month  = {},
  note   = {特願2019-030421(2019/02/22), 特開2020-117430(2020/08/06), 特許第7176977号(2022/11/14)}
}




@phdthesis{CTT100788481,
  author = {若林諒},
  title = {酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究},
  school = {東京工業大学},
  year = 2019,
}

@phdthesis{CTT100826718,
  author = {若林諒},
  title = {酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究},
  school = {東京工業大学},
  year = 2019,
}

@phdthesis{CTT100788480,
  author = {若林諒},
  title = {酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究},
  school = {東京工業大学},
  year = 2019,
}

@phdthesis{CTT100788482,
  author = {若林諒},
  title = {酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究},
  school = {東京工業大学},
  year = 2019,
}