@article{CTT100654227,
  author = {N. Kadotani and T. Ohashi and T. Takahashi and S. Oda and K. Uchida},
  title = {Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100654228,
  author = {N. Kadotani and T. Takahashi and T. Ohashi and S. Oda and K. Uchida},
  title = {Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@inproceedings{CTT100664462,
  author = {黒澤裕也 and 角谷直哉 and 高橋綱己 and 大橋輝之 and 小田俊理 and 内田建},
  title = {不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与える影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100635543,
  author = {黒澤裕也 and 角谷直哉 and 高橋綱己 and 大橋輝之 and 小田俊理 and 内田 建},
  title = {ナノ薄膜SOI における不純物のイオン化エネルギー増大},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100619840,
  author = {角谷直哉 and 高橋綱己 and 大橋輝之 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620954,
  author = {N. Kadotani and T. Takahashi and K. Chen and T. Kodera and S. Oda and K.  Uchida},
  title = {Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620242,
  author = {角谷直哉 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価},
  booktitle = {},
  year = 2010,
}