@article{CTT100942174,
  author = {Katsutoshi Ito and Yusaku Shiotsu and SATOSHI SUGAHARA},
  title = {A New Ultralow-Voltage Retention SRAM Cell Enhancing Noise Immunity},
  journal = {IEEE Open J. Circuits Syst.},
  year = 2025,
}

@inproceedings{CTT100942185,
  author = {伊藤克俊 and 塩津勇作 and 藤原 拓真 and 菅原聡},
  title = {エネルギー最小点動作PIMに応用可能な高ノイズ耐性SRAMセル},
  booktitle = {},
  year = 2025,
}

@inproceedings{CTT100933443,
  author = {Katsutoshi Ito and Yusaku Shiotsu and SATOSHI SUGAHARA},
  title = {Design of Highly-Stable Energy-Minimum-Point SRAM Using Ultralow-Voltage Retention Cell},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100933447,
  author = {伊藤克俊 and 塩津勇作 and 菅原聡},
  title = {高安定エネルギー最小点動作が可能なULVR-SRAMセルの設計},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100937294,
  author = {伊藤克俊 and 塩津勇作 and 菅原聡},
  title = {新型超低電圧リテンションSRAM (ULVR-SRAM)マクロの設計と性能解析},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886912,
  author = {伊藤克俊 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {新型超低電圧リテンションSRAM (ULVR-SRAM)セルの提案},
  booktitle = {},
  year = 2022,
}