@article{CTT100738834,
  author = {A. Yukimachi and Y. Miyamoto},
  title = {InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope},
  journal = {Jpn. J. Appl. Phys.},
  year = 2016,
}

@article{CTT100735791,
  author = {Nobukazu Kise and Haruki Kinoshita and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain},
  journal = {Solid-State Electronics},
  year = 2016,
}

@inproceedings{CTT100740963,
  author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
  title = {Experimental approach for feasibility of superlattice FETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725185,
  author = {Haruki Kinoshita and Nobukazu Kise and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100800888,
  author = {行待 篤志 and 宮本 恭幸},
  title = {超格子FET のためのAlAs/InGaAsダブルバリアp-i-n 接合ダイオード},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721929,
  author = {Y. Miyamoto and M. Fujimatsu and K. Ohashi and A. Yukimachi and S. Iwata},
  title = {Steep subthreshold slope in InGaAs MOSFET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693240,
  author = {行待 篤志 and 柏野 壮志 and 宮本 恭幸},
  title = {超格子FETに向けたダブルバリアp-i-n接合ダイオード},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693236,
  author = {宮本恭幸 and 行待篤志},
  title = {超格子ソースによるスティープスロープFETの可能性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100679174,
  author = {柏野壮志 and 行待篤志 and 宮本恭幸},
  title = {急峻なSS特性の為のInGaAs/InP超格子FETにおけるキャリア濃度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679164,
  author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
  title = {Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope},
  booktitle = {},
  year = 2013,
}