@article{CTT100887487,
  author = {Y. Ito and S. Tamai and T. Hoshi and T. Gotow and Y. Miyamoto},
  title = {Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers},
  journal = {JPN. J. APPL. PHYS.},
  year = 2023,
}

@inproceedings{CTT100932785,
  author = {Haruki Sano and Yoshikaze Ito and Itsuki Yoshida and Yasuyuki Miyamoto},
  title = {Influence of surface treatment on short channel effect in GaN HEMTs},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100932784,
  author = {Y. Ito and I. Yoshida and Y. Miyamoto},
  title = {GaN HEMT using partial high-k films at G-D spacing to improve breakdown voltage},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100887483,
  author = {Y. Ito and S. Tamai and T. Hoshi and Y. Miyamoto},
  title = {GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers},
  booktitle = {},
  year = 2022,
}