@inproceedings{CTT100654582,
  author = {Ryuji Hosoi and Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654680,
  author = {Yuya Suzuki and ダリューシュザデ and Ryuji Hosoi and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657357,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657193,
  author = {DARYOUSH ZADEH and Ryuji Hosoi and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characterization and improvement of high-k/InGaAs devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657212,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100628214,
  author = {鈴木佑哉 and 細井隆司 and ダリューシュザデ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100616054,
  author = {細井隆司 and 神田高志 and ダリューシュザデ and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631002,
  author = {ダリューシュザデ and 神田高志 and 細井隆司 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As},
  booktitle = {},
  year = 2010,
}