@article{CTT100627546,
  author = {Gwang-Geun Lee and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene)},
  journal = {Applied Physics Express},
  year = 2011,
}

@article{CTT100627545,
  author = {Gwang-Geun Lee and Eisuke Tokumitsu and Sung-Min Yoon and Yosihisa Fujisaki and Joo-Won Yoon and Hiroshi Ishiwara},
  title = {The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)},
  journal = {Applied Physics Letters},
  year = 2011,
}

@article{CTT100614542,
  author = {Sung-Min Yoon and Shin-Hyuk Yang and Soon-Won Jung and Chun-Won Byun and Sang-Hee Ko Park and Chi-Sun Hwang and Gwang-Geun Lee and Eisuke Tokumitsu and Hiroshi Ishiwara},
  title = {Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor},
  journal = {Applied Physics Letters},
  year = 2010,
}

@inproceedings{CTT100658532,
  author = {Eisuke Tokumitsu and Gwang-Geun Lee},
  title = {Switching properties of ferroelectric P(VDF-TrFE) films fabricated on oxide electrodes},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100632301,
  author = {Lee Gwang Geun and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Low voltage operation of ferroelectric thin film transistors using P(VDF-TrFE) and IGZO},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100611600,
  author = {G.-G. Lee and S.-M. Yoon and J.-W. Yoon and Y. Fujisaki and H. Ishiwara and E. Tokumitsu},
  title = {Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100622407,
  author = {GwangGeun Lee and Sung-ming Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100617816,
  author = {Gwang-Geun Lee and Sung-Min Yoon and Joo-Won Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100604738,
  author = {Gwang-Geun Lee and Sung-Min Yoon and Joo-Won Yoon and 藤崎芳久 and 石原宏 and 徳光永輔},
  title = {有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価},
  booktitle = {信学技報、SDM2010-16、OME2010-16(2010-04)},
  year = 2010,
}

@inproceedings{CTT100605090,
  author = {GwangGeun Lee and Sung-ming Yoon and JooWon Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100589332,
  author = {Lee Gwang Geun and Hoowon Yoon and Yosihisa Fujisaki and Hiroshi Ishiwara and Eisuke Tokumitsu},
  title = {Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode},
  booktitle = {第70回 応用物理学会学術講演会},
  year = 2009,
}