@article{CTT100659703,
  author = {林 一夫 and 大石 敏之 and 加茂 宣卓 and 山口 裕太郎 and 大塚 浩志 and 山中 宏治 and 中山 正敏 and 宮本 恭幸},
  title = {AlGaN/GaN HEMTにおけるドレーン漏れ電流の解析},
  journal = {電子情報通信学会論文誌. C, エレクトロニクス},
  year = 2013,
}

@article{CTT100659581,
  author = {K. Hayashi and Y. Yamaguchi and T. Oishi and H. Ostuka and K. Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Mechanism Study of Gate Leakage Current for AlGaN/GaN HEMT Structure Under High Reverse Bias by TSB Model and TCAD Simulation},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@inproceedings{CTT100693227,
  author = {大石敏之 and 山口裕太郎 and 大塚浩志 and 山中宏治 and 野上洋一 and 福本宏 and 宮本恭幸},
  title = {GaNショットキーバリアダイオードの温度依存性モデル},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693225,
  author = {山口裕太郎 and 大石敏之 and 大塚浩志 and 山中宏治 and TeoKoonHoo and 宮本恭幸},
  title = {GaN HEMTの過渡応答バイアス依存性によるトラップ解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100678948,
  author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and K. Yamanaka and Y. Miyamoto},
  title = {Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659716,
  author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and T. Nanjo and K. Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Simulation study and reduction of reverse gate leakage current for GaN HEMTs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659713,
  author = {T. Oishi and K. Hayashi and Y. Yamaguchi and H. Otsuka and K.  Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659763,
  author = {大石敏之 and 林一夫 and 佐々木肇 and 山口裕太郎 and 大塚浩志 and 山中宏治 and 中山正敏 and 宮本恭幸},
  title = {トランジスタ動作時における GaN HEMT ゲートリークのデバイスシミュレーションによる解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659707,
  author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and K. Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642427,
  author = {山口裕太郎 and 大石敏之 and 大塚浩志 and 山中宏治 and 南條拓真 and 中山正敏 and 平野嘉仁 and 宮本恭幸},
  title = {デバイスシミュレーションによるGaN HEMTのゲートリークの解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100628834,
  author = {Y. Yamaguchi and T. Sagai and Y. Miyamoto},
  title = {Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619805,
  author = {山口裕太郎 and 佐賀井健 and 宮本恭幸},
  title = {基板転写プロセスを用いたSi基板上InP/InGaAs SHBTの作製},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619804,
  author = {金澤 徹 and 寺尾 良輔 and 山口 裕太郎 and 池田 俊介 and 米内 義晴 and 加藤 淳 and 宮本 恭幸},
  title = {裏面電極を有するⅢ－Ⅴ族量子井戸型チャネルMOSFET},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100612622,
  author = {金澤徹 and 寺尾良輔 and 山口裕太郎 and 池田俊介 and 米内義晴 and 加藤淳 and 宮本恭幸},
  title = {Si基板上貼付された裏面電極付InP/InGaAs MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100612624,
  author = {Toru Kanazawa and Ryousuke Terao and Yuutarou Yamaguchi and Shunsuke Ikeda and Yosiharu Yonai and YASUYUKI MIYAMOTO},
  title = {InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610495,
  author = {磯谷優治 and 小林 嵩 and 山口裕太郎 and 宮本恭幸 and 古屋一仁},
  title = {Si基板上へ転写したInP系HBTの動作},
  booktitle = {},
  year = 2010,
}