@inproceedings{CTT100631923,
  author = {Eisuke Tokumitsu and Akio Ishiguro and Hiroyuki Yamada and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Hiroaki Sumitani and Tatsuo Oomori},
  title = {Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632115,
  author = {山田泰之 and 石黒暁夫 and 日野史郎 and 三浦 成久 and 今泉昌之 and 岸谷博昭 and 徳光永輔},
  title = {Al2O3堆積膜をゲート絶縁膜に用いたSiC-MOSFETの作製と評価},
  booktitle = {信学技報},
  year = 2011,
}

@inproceedings{CTT100632120,
  author = {石黒暁夫 and 山田泰之 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {高温窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100614529,
  author = {石黒暁夫 and 山田泰之 and 日野史郎 and 三浦 成久 and 大森 達夫 and 徳光永輔},
  title = {高温窒化処理とAl2O3堆積膜を用いた４H-SiC MOSFETの作製と評価},
  booktitle = {},
  year = 2010,
}