@article{CTT100678925,
  author = {K. Ohsawa and A. Kato and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with InP source for high current density},
  journal = {IEICE Electronics Express},
  year = 2014,
}

@inproceedings{CTT100679171,
  author = {R. Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
  title = {Normally-off AlGaN/GaN HEMT using Digital Etching Technique},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693234,
  author = {Ryota Yamanaka and Toru Kanazawa and 柳生栄治 and YASUYUKI MIYAMOTO},
  title = {デジタルエッチングを用いたGaN HEMTのノーマリーオフ化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674604,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Zhichen Gu and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {［依頼講演］透磁率制御メタマテリアルを装荷した光変調器},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693229,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa and Yosiharu Yonai and atsushi kato and Motohiko Fujimatsu and Masashi Kashiwano and Kazuto Ohsawa and Kazumi Ohashi},
  title = {低電圧/高速動作にむけたInGaAs MOSFETソース構造},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100679168,
  author = {Y. Mishima and T. Kanazawa and H. Kinoshita and E. Uehara and Y. Miyamoto},
  title = {InGaAs tri-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100661087,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {(Invited) Meta-photonics for Advanced InP-based Photonic Integration},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679169,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and T. Irisawa and M. Oda and T. Tezuka},
  title = {(Invited) Growth Process for High Performance of InGaAs MOSFETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679167,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and M. Fujimatsu and M. Kashiwano and K. Ohsawa and K. Ohashi},
  title = {(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679181,
  author = {Yuichi Mishima and Toru Kanazawa and Haruki Kinoshita and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100665747,
  author = {Tomohiro Amemiya and Masato Taki and Toru Kanazawa and SHIGEHISA ARAI},
  title = {光子における有効電磁場を使った非対称光学迷彩},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100664429,
  author = {Tomohiro Amemiya and Masato Taki and Toru Kanazawa and SHIGEHISA ARAI},
  title = {Asymmetric Invisibility Cloaking Theory Based on the Concept of Effective Electromagnetic Fields for Photons},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679178,
  author = {Toru Kanazawa and Yuichi Mishima and Haruki Kinoshita and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET},
  booktitle = {IEICE technical report},
  year = 2014,
}

@misc{CTT100710319,
  author = {YASUYUKI MIYAMOTO and Ryota Yamanaka and Toru Kanazawa},
  title = {半導体装置の製造方法
},
  howpublished = {PublishedPatent},
  year = 2016,
  month  = {},
  note   = {特願2014-174229(2014/08/28), 特開2016-051722(2016/04/11)}
}


@misc{CTT100677655,
  author = {YASUYUKI MIYAMOTO and Masashi Kashiwano and Toru Kanazawa},
  title = {電界効果トランジスタ},
  howpublished = {PublishedPatent},
  year = 2014,
  month  = {},
  note   = {特願2013-001907(2013/01/09), 特開2014-135359(2014/07/24)}
}