@article{CTT100800921,
  author = {Y. Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and K. Ohsawa},
  title = {Regrown Source/Drain in InGaAs Multi-Gate MOSFETs},
  journal = {J. Crystal Growth},
  year = 2019,
}

@article{CTT100800918,
  author = {W Zhang and T. Kanazawa and Y. Miyamoto},
  title = {Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment},
  journal = {Apl. Phys. Exp},
  year = 2019,
}

@article{CTT100800892,
  author = {W Zhang and S. Netsu and T. Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@inproceedings{CTT100822685,
  author = {M.Kitamura and T.Kanazawa and Y.Miyamoto},
  title = {Evaluation of fabricationmethod of InGaAs nanosheet},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800847,
  author = {Wenlun Zhang and Toru Kanazawa and Minoru Kitamura and YASUYUKI MIYAMOTO},
  title = {UV-O3表面酸化によるHfS2 MOSFETの性能改善},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800848,
  author = {Minoru Kitamura and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {HSQを用いたInGaAsナノシート構造作製法評価},
  booktitle = {},
  year = 2019,
}