@article{CTT100442433,
  author = {T.Sekiguchi and Y.Miyamoto and K.Furuya},
  title = {Influence of impurities on the performance of doped well Ga In As/Inp resonant tunneling diode},
  journal = {Jpn. J. Appl. Phys},
  year = 1993,
}

@article{CTT100442434,
  author = {K.Kurihara and Y.Miyamoto and K.Furuya},
  title = {Observation of InP Surfaces after (NH4)2Sx treatment by a scanning tunneling microscope},
  journal = {Jpn. J. Appl. Phys},
  year = 1993,
}

@article{CTT100442435,
  author = {Y.Miyake and H.Hirayama and K.Kudo and S.Tamura and S.Arai and M.Asada and Y.Miyamoto and Y.Suematsu},
  title = {Room temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantuw-wire size active region},
  journal = {IEEE J. Quantum Electron},
  year = 1993,
}

@article{CTT100442436,
  author = {YASUYUKI MIYAMOTO},
  title = {Fabrication technology for long-wavelength Ga In As(P)InP quantum-wire lasers by wet-chemical etching and OMVPE regrowth},
  journal = {Opto electronics-Devices and technology},
  year = 1993,
}