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Publication List - YASUYUKI MIYAMOTO 1997 (8 / 477 entries)
Journal Paper
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H.Hongo,
Y.Miyamoto,
M.Suhara,
K.Furuya.
Hot electron interference by 40nm-pitch double slit buried in semiconductor,
Microelectronic Engineering,
Vol. 35,
pp. 337,
1997.
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H.Hongo,
H.Tanaka,
Y.Miyamoto,
T.Otake,
J.Yoshinaga,
K.Furuya.
Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs toward hot electron interference/diffraction devices,
Microelectronic Engineering,
Vol. 35,
pp. 241,
1997.
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YASUYUKI MIYAMOTO.
High-temperature estimation of phase coherent length of hot electron using GaInAs/InP triple-barrier resonant tunneling diodes grown by OMVPE,
Jpn.J.Appl.Phys.,
Vol. 36,
No. 3B,
pp. 1846,
1997.
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M.Suhara,
C.Nagao,
H.Honji,
Y.Miyamoto,
K.Furuya,
R.Takemura.
Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes,
J.Cryst.Growth,
Vol. 179,
No. 1-2,
pp. 18,
1997.
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T.Oobo,
R.Takemura,
M.Suhara,
Y.Miyamoto,
K.Furuya.
High Peak to Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes,
Jpn.J.Appl.Phys.,
Vol. 36,
No. 8,
pp. 5079,
1997.
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H.Hongo,
Y.Miyamoto,
M.Suhara,
K.Furuya.
A 40nm pitch doble slit experiment of hot electrons in a semiconductor under a magnetic field,
Applied Physics Letter,
Vol. 70,
No. 1,
pp. 93,
1997.
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J.M.M.Rios,
L.M.Lurardi,
S.Chandrasekhar,
Y.Miyamoto.
A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors(HBTs),
IEEE Transaction of Microwave Theory and Technigue,
Vol. 45,
No. 1,
pp. 39,
1997.
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H.Hongo,
Y.Miyamoto,
M.Gault,
K.Furuya.
Influence of finite energy width in electron distribution to an experiment of hot electron donble-slit eyperiment,
J. Appl. Phys.,
Vol. 82,
No. 8,
pp. 3846,
1997.
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