@article{CTT100434642,
  author = {T.Oobo and R.Takemura and K.Sato and M.Suhara and Y.Miyamoto and K.Furuya},
  title = {Effect of spacer layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE},
  journal = { Jpn. J. Appl. Phys.},
  year = 1998,
}

@article{CTT100434643,
  author = {A.Kokubo and T.Hattori and H.Hongo and M.Suhara and Y.Miyamoto and K.Furuya},
  title = {25 nm Pitch GaInAs/InP Buried Structure by Calixarene Resist},
  journal = {Jpn. J. Appl. Phys.},
  year = 1998,
}

@article{CTT100442447,
  author = {H.Hongo and Y.Miyamoto and J.Suzuki and M.Suhara and K.Furuya},
  title = {Wrapped Alignment Mark for fabrication of Interference/Diffraction hot electron devices},
  journal = {Jpn. J. Appl.Phys.},
  year = 1998,
}

@article{CTT100442448,
  author = {Y.Miyamoto and A.Yamaguchi and K. Oshima and W.Saitoh and M.Asada},
  title = {Metal-Insulator-Semiconductor emitter with epitaxial CaF2 layer as insnlator},
  journal = {J. Vac. Sci. Technol.},
  year = 1998,
}

@article{CTT100442449,
  author = {Y.Miyamoto and J.Yoshinaga and H.Toda and T.Arai and H.Hongo and T.Hattori and A.Kokubo and K.Furuya},
  title = {Sub-micron GaInAs/InP Hot Electron Transistors by EBL process and size dependence of current gain},
  journal = {Solid State Electronics},
  year = 1998,
}

@article{CTT100537351,
  author = {Y.Miyamoto and A.Kokubo and T.Hattori and H.Hongo and M.Suhara and K.Furuya},
  title = {25 nm pitch GaInAs/InP buried structure : Improvement by calixarene as EB resist and TBP as P-source in OMVPE regrowth},
  journal = {  J. Vac. Sci. Technol. B},
  year = 1998,
}