@article{CTT100433146,
  author = {Y. Miyamoto and A. Kokubo and H. Oguchi and M. Kurahashi and K. Furuya},
  title = {Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device},
  journal = {Applied Surface Science},
  year = 2000,
}

@article{CTT100434645,
  author = {T. Arai and H. Tobita and Y. Harada and M. Suhara and Y. Miyamoto and K. Furuya},
  title = {Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten},
  journal = {Physica E},
  year = 2000,
}

@article{CTT100434646,
  author = {T. Arai and Y. Harada and S. Yamagami and Y. Miyamoto and K. Furuya},
  title = {First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance},
  journal = { Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100434647,
  author = {YASUYUKI MIYAMOTO},
  title = {Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes},
  journal = {Jpn. J. Appl. Phys},
  year = 2000,
}

@article{CTT100435421,
  author = {T. Arai and Y. Harada and S. Yamagami and Y. Miyamoto and K. Furuya},
  title = {C<sub>BC</sub> reduction in GaInAs/InP buried metal heterojunction bipolar transistor},
  journal = {Twelfth International Conference on Indium Phosphide and Related Materials (IPRM'00)},
  year = 2000,
}

@article{CTT100435422,
  author = {T. Arai and H. Tobita and Y. Miyamoto and K. Furuya},
  title = {GaAs buried growth over tungsten stripes using TEG and TMG},
  journal = {11th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XI)},
  year = 2000,
}

@article{CTT100435423,
  author = {Y. Miyamoto and M. Kurita and K. Furuya},
  title = {Vacuum Microelectronic Electron Emitter by InP Double Barrier Diode Toward RFApplication},
  journal = {58th Annual Device Research Conference},
  year = 2000,
}

@article{CTT100435424,
  author = {T. Arai and S. Yamagami and Y. Okuda and Y. Harada and Y. Miyamoto and K. Furuya},
  title = {InP DHBT with 0.5μm Wide Emitter along 010 Direction toward BM-HBT with Narrow Emitter},
  journal = {Topical Workshop on Heterostructure Microelectronics (TWHM'00)},
  year = 2000,
}

@article{CTT100435425,
  author = {Y. Miyamoto and R. Yamamoto and H. Tobita and K. Furuya},
  title = {Very shallow n-GaAs ohmic contact with 10nm thick GaInAs layer},
  journal = {19th Electronic Materials Symposium},
  year = 2000,
}

@article{CTT100435426,
  author = {新井俊希 and 原田恵充 and 山上滋春 and 宮本恭幸 and 古屋一仁},
  title = {Buried Metal Heterojunction Bipolar Transistorにおけるベースコレクタ間容量の低減},
  journal = {第47回応用物理学会関係連合講演会},
  year = 2000,
}

@article{CTT100435427,
  author = {新井俊希 and 飛田洋 and 宮本恭幸 and 古屋一仁},
  title = {TMGとTEGを材料としたタングステン細線のGaAs OMVPE埋め込み成長},
  journal = {第47回応用物理学会関係連合講演会},
  year = 2000,
}

@article{CTT100435474,
  author = {小口博嗣 and 佐藤航一郎 and 宮本恭幸 and 古屋一仁},
  title = {電子波干渉素子用GaInAs上80nm周期電極の特性},
  journal = {第47回応用物理学会関係連合講演会},
  year = 2000,
}

@article{CTT100435475,
  author = {山上滋春 and 新井俊希 and 奥田慶文 and 宮本恭幸 and 古屋一仁},
  title = {BMHBT微細化に向けた0.5μｍ幅エミッタInP系DHBTの作製と評価},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100435476,
  author = {栗田昌尚 and 宮本恭幸 and 古屋一仁},
  title = {GaInAs/AlAs/InP構造真空エミッタからの電子放出},
  journal = {第61回応用物理学会学術講演会},
  year = 2000,
}

@article{CTT100445305,
  author = {T. Arai and H. Tobita and Y. Miyamoto and K. Furuya},
  title = {GaAs buried growth over tungsten stripe using TEG and TMG},
  journal = {J. Crystal Growth},
  year = 2000,
}