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Publication List - YASUYUKI MIYAMOTO 2000 (15 / 477 entries)
Journal Paper
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Y. Miyamoto,
A. Kokubo,
H. Oguchi,
M. Kurahashi,
K. Furuya.
Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device,
Applied Surface Science,
Vol. 159-160,
No. 1-4,
pp. 179-185,
2000.
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T. Arai,
H. Tobita,
Y. Harada,
M. Suhara,
Y. Miyamoto,
K. Furuya.
Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten,
Physica E,
Vol. 7,
No. 3-4,
pp. 896,
2000.
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T. Arai,
Y. Harada,
S. Yamagami,
Y. Miyamoto,
K. Furuya.
First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance,
Jpn. J. Appl. Phys.,
Vol. 39,
No. 6A,
pp. L503-L505,
2000.
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YASUYUKI MIYAMOTO.
Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes,
Jpn. J. Appl. Phys,
Vol. 39,
No. 6A,
pp. 3314,
2000.
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T. Arai,
Y. Harada,
S. Yamagami,
Y. Miyamoto,
K. Furuya.
CBC reduction in GaInAs/InP buried metal heterojunction bipolar transistor,
Twelfth International Conference on Indium Phosphide and Related Materials (IPRM'00),
Vol. TuB1.6,
2000.
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T. Arai,
H. Tobita,
Y. Miyamoto,
K. Furuya.
GaAs buried growth over tungsten stripes using TEG and TMG,
11th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XI),
Vol. Tu-A3,
2000.
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Y. Miyamoto,
M. Kurita,
K. Furuya.
Vacuum Microelectronic Electron Emitter by InP Double Barrier Diode Toward RFApplication,
58th Annual Device Research Conference,
Vol. III-5,
2000.
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T. Arai,
S. Yamagami,
Y. Okuda,
Y. Harada,
Y. Miyamoto,
K. Furuya.
InP DHBT with 0.5μm Wide Emitter along 010 Direction toward BM-HBT with Narrow Emitter,
Topical Workshop on Heterostructure Microelectronics (TWHM'00),
Vol. Tue-3,
2000.
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Y. Miyamoto,
R. Yamamoto,
H. Tobita,
K. Furuya.
Very shallow n-GaAs ohmic contact with 10nm thick GaInAs layer,
19th Electronic Materials Symposium,
Vol. B2,
2000.
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新井俊希,
原田恵充,
山上滋春,
宮本恭幸,
古屋一仁.
Buried Metal Heterojunction Bipolar Transistorにおけるベースコレクタ間容量の低減,
第47回応用物理学会関係連合講演会,
Vol. 28a-ZA-3,
2000.
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新井俊希,
飛田洋,
宮本恭幸,
古屋一仁.
TMGとTEGを材料としたタングステン細線のGaAs OMVPE埋め込み成長,
第47回応用物理学会関係連合講演会,
Vol. 31a-P20-10,
2000.
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小口博嗣,
佐藤航一郎,
宮本恭幸,
古屋一仁.
電子波干渉素子用GaInAs上80nm周期電極の特性,
第47回応用物理学会関係連合講演会,
Vol. 30p-YD-1,
2000.
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山上滋春,
新井俊希,
奥田慶文,
宮本恭幸,
古屋一仁.
BMHBT微細化に向けた0.5μm幅エミッタInP系DHBTの作製と評価,
第61回応用物理学会学術講演会,
Vol. 3p-ZQ-3,
2000.
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栗田昌尚,
宮本恭幸,
古屋一仁.
GaInAs/AlAs/InP構造真空エミッタからの電子放出,
第61回応用物理学会学術講演会,
Vol. 6p-ZB-12,
2000.
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T. Arai,
H. Tobita,
Y. Miyamoto,
K. Furuya.
GaAs buried growth over tungsten stripe using TEG and TMG,
J. Crystal Growth,
Vol. 221,
No. 1-4,
pp. 212-219,
2000.
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