@article{CTT100451464,
  author = {T. Arai and S. Yamagami and Y. Miyamoto and KAZUHITO FURUYA},
  title = {Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires},
  journal = {Jpn. J. Appl. Phys.},
  year = 2001,
}

@article{CTT100451465,
  author = {T. Arai and S. Yamagami and Y. Okuda and Y. Harada and Y. Miyamoto and K. Furuya},
  title = {InP DHBT with 0.5 um wide emitter along <010> direction toward BM-HBT with narrow emitter},
  journal = {  Trans. IECE of Japan},
  year = 2001,
}

@article{CTT100451466,
  author = {T. Arai and S. Yamagami and Y. Miyamoto and K. Furuya},
  title = {Submicron Buried Metal Heterojuunction Bipolar Transistors},
  journal = { International Conference on Indium Phosphide and Related Materials},
  year = 2001,
}

@article{CTT100451467,
  author = {T. Arai and T. Morita and H.Nagatsuka and Y. Miyamoto and K.  Furuya},
  title = {Fabrication of InP DHBTs with 0.1μm Wide Emitter},
  journal = { 59th Annual Device Research Conference},
  year = 2001,
}

@article{CTT100451468,
  author = {山本練 and 宮本恭幸 and 古屋一仁 and E. リンド and I.ピッツンカ and Ｌ.バナソン and L.サミュエルソン},
  title = {ノンドープGaAs中の埋込み金属電極によるホットエレクトロン電流変調},
  journal = {第48回応用物理学会関係連合講演会},
  year = 2001,
}

@article{CTT100451469,
  author = {新井俊希 and 山上滋春 and 酒井隆史 and 宮本恭幸 and 古屋一仁},
  title = {BM-HBT高速化のためのコレクタ抵抗の低減},
  journal = {第48回応用物理学会関係連合講演会},
  year = 2001,
}

@article{CTT100451470,
  author = {前堅一 and 柄沢伸也 and 宮本恭幸 and 古屋一仁},
  title = {GaAs/AlAs/InGaPショットキーコンタクト構造真空エミッタ},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100453711,
  author = {中村弘道 and 小口博嗣 and 二宮泰徳 and 宮本恭幸 and 古屋一仁},
  title = {80nm周期Au/Ti/n-GaInAs オーミック電極のアイソレーション},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100453712,
  author = {新井俊希 and 山上滋春 and 酒井隆史 and 宮本恭幸 and 古屋一仁},
  title = {EB露光による微細金属埋込みHBTの作製},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100453713,
  author = {森田竜夫 and 新井俊希 and 長塚弘美 and 宮本恭幸 and 古屋一仁},
  title = {0.1μｍ幅エミッタを有するInP/GaInAs系DHBTの作製},
  journal = {第62回応用物理学会学術講演会},
  year = 2001,
}

@article{CTT100506680,
  author = {Y. Miyamoto and M. Kurita and K. Furuya},
  title = {GaInAs/AlAs/InP hot electron vacuum emitter},
  journal = {  1st International Workshop on Quantum Nonplaner Nanostructures & Nanoelectronics},
  year = 2001,
}

@article{CTT100506681,
  author = {Y. Miyamoto and H. Oguchi and H. Nakamura and Y. Ninomiya and K. Furuya},
  title = {80 nm periodical ohmic contacts toward Young's double slit experiment using a semiconductor},
  journal = {  1st International Workshop on Quantum Nonplaner Nanostructures & Nanoelectronics},
  year = 2001,
}

@article{CTT100506682,
  author = {L.-E. Wernersson and R. Yamamoto and E. Lind and I. Pietzonka and W. Seifert and Y. Miyamoto and K. Furuya and L. Samuelson},
  title = {Attractive Potential around a Buried Metallic Gate in a Schottky Collector Hot Electron Transistor},
  journal = { 28th International Symposium on Compound Semiconductors},
  year = 2001,
}

@article{CTT100506683,
  author = {Y.Miyamoto and H.Oguchi and H.Nakamura and Y.Ninomiya and K.Furuya},
  title = {Isolation of 80 nm periodical Au/Ti/n-GaInAs ohmic contacts},
  journal = { 20th Electronic Materials Symposium},
  year = 2001,
}