@article{CTT100499930, author = {Yasuyuki Miyamoto and Ren Yamamoto and Hiroshi Maeda and Katsuhiko Takeuchi and Nobuya Machida and Lars-Erik Wernersson and Kazuhito Furuya}, title = {InP Hot Electron Transistors with a Buried Metal Gate}, journal = {Jpn. J. Appl. Phys.}, year = 2003, } @article{CTT100491645, author = {K. Furuya and Y. Ninomiya and Y. Miyamoto}, title = {Young's Double-Slit Interference Experiment of Hot Electron in Semiconductors}, journal = {The 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors}, year = 2003, } @article{CTT100491646, author = {K. Takeuchi and H. Maeda and R. Makagawa and Y. Miyamoto and K. Furuya}, title = {InP hot electron transistors using modulation of gate electrodes}, journal = {The 2003 International Conference on Solid State Devices and Materials}, year = 2003, } @article{CTT100491647, author = {K. Sasao and Y. Azuma and N. Kaneda and E. Hase and Y. Miyamoto and Y. Majima}, title = {Observation of current modulation in SAM-FET fabricated by an air-bridge structure}, journal = {The 2003 International Conference on Solid State Devices and Materials}, year = 2003, } @article{CTT100491648, author = {K.Yokoyama and Y.Miyamoto and T.Morita and T.Arai and K.Matsuda and K.Furuya}, title = {Wet etching for self-aligned 0.1-um-wide emitter in InP/InGaAs HBT}, journal = {Topical Workshop on Heterostructure Microelectronics}, year = 2003, } @article{CTT100491649, author = {Y. Miyamoto and K. Sasao and Y. Azuma and N. Kaneda and Y. Majima}, title = {Small Au/SAM/Au junctions by EB lithography}, journal = {Photonic West}, year = 2003, } @article{CTT100491653, author = {田中剛 and 徳留功一 and 宮本恭幸}, title = {低酸素MOVPE材料を用いたAlInAs,InPとAlInAs/InP HEMT構造の成長}, journal = {第50回応用物理学会関係連合講演会}, year = 2003, } @article{CTT100491658, author = {Y. Miyamoto and Y. Tohmori}, title = {Activities of Indium Phosphide in Japan}, journal = {GaAs Mantech}, year = 2003, } @article{CTT100491659, author = {Tsuyoshi Tanaka and Kohichi Tokudome and Yasuyuki Miyamoto}, title = {Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer}, journal = {Jpn. J. Appl. Phys.}, year = 2003, } @article{CTT100491644, author = {M. Yoshizawa and S. Moriya and H. Nakano and T. Morita and T. Kitagawa and Y. Miyamoto}, title = {The Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography}, journal = {2003 International Microprocesses and Nanotechnology Conference}, year = 2003, } @article{CTT100499928, author = {Keigo Yokoyama and Koji Matuda and Toshihiro Nonaka and Yasuyuki Miyamoto and Kazuhito Furuya}, title = {Fabrication of GaInAs/InP heterojunction bipolar transistors with a single tungsten wire as collector electrode}, journal = { Jpn. J. Appl. Phys.}, year = 2003, }