@article{CTT100549484,
  author = {Chia-Yuan  Chang and Heng-Tung  Hsu and Edward Yi  Chang and Chien-I  Kuo and Suman   Datta and Marko  Radosavljevic and YASUYUKI MIYAMOTO and Guo-Wei  Huang},
  title = {Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications},
  journal = {IEEE Electron Dev. Lett.},
  year = 2007,
}

@article{CTT100549483,
  author = {Kazuya Nishihori and Yasuyuki Miyamoto},
  title = {Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs},
  journal = {Trans. IECE of Japan},
  year = 2007,
}

@article{CTT100534004,
  author = {Chia-Yuan Chang and Edward Yi Chang and Yi-Chung Lien and Yasuyuki Miyamoto and Chien-I Kuo and Sze-Hung Chang and Li-Hsin Chu},
  title = {High-PerformanceIn0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications},
  journal = {Jpn. J. Appl. Phys.},
  year = 2007,
}

@article{CTT100534002,
  author = {Y. Miyamoto and M. Ishida and T. Yamamoto and T. Miura and K. Furuya},
  title = {InP buried growth of SiO2 wires toward reduction of collector capacitance in HBT},
  journal = {J. Cryst, Growth},
  year = 2007,
}

@article{CTT100534003,
  author = {A. Suwa and I. Kashima and Y. Miyamoto and K. Furuya},
  title = {Increase of collector current in hot electron transistors controlled by gate bias},
  journal = {Jpn. J. Appl. Phys.,},
  year = 2007,
}

@inproceedings{CTT100549527,
  author = {Shinnosuke Takahashi and Tsukasa Miura and Hiroaki Yamashita and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {DC Characteristics of Heterojunction Bipolar Transistor with Buried SiO2 Wires in Collector},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100563449,
  author = {TOMOHIRO YAMADA and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {先端ノンドープ構造ホットエレクトロンエミッタ充電時間解析},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100549526,
  author = {Hiroaki Yamashita and Tsukasa Miura and Shinnosuke Takahashi and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Fabrication of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100534008,
  author = {N. Kashio and K. Kurishima and Y. Fukai and S. Yamahata and Y. Miyamoto},
  title = {Emitter layer design for highly reliable and high-speed InP HBTs},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100534007,
  author = {T. Hino and A. Suwa and T. Hasegawa and H. Saito and M. Oono and Y. Miyamoto and K. Furuya},
  title = {Fabrication of hot electron transistors controlled by insulated gate},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100534012,
  author = {日野高宏 and 諏訪輝 and 齋藤尚史 and 宮本恭幸 and 古屋一仁},
  title = {絶縁ゲートホットエレクトロントランジスタのエミッタ微細化},
  booktitle = {応用物理学会},
  year = 2007,
}

@inproceedings{CTT100534010,
  author = {齋藤尚史 and 諏訪輝 and 長谷川貴史 and 日野高宏 and 大野真也 and 五十嵐満彦 and 宮本恭幸 and 古屋一仁},
  title = {絶縁ゲートにより制御するホットエレクトロントランジスタの走行層幅微細化},
  booktitle = {電気学会デバイス研究会},
  year = 2007,
}

@inproceedings{CTT100534011,
  author = {山下浩明 and 三浦司 and 高橋新之助 and 宮本恭幸 and 古屋一仁},
  title = {SiO2細線埋め込みHBTにおけるコレクタ容量削減のための200nm厚細線},
  booktitle = {応用物理学会},
  year = 2007,
}

@inproceedings{CTT100534013,
  author = {高橋新之助 and 三浦司 and 山下浩明 and 宮本恭幸 and 古屋一仁},
  title = {コレクタ層内にSiO2細線を埋め込んだHBTのDC特性},
  booktitle = {応用物理学会},
  year = 2007,
}