@article{CTT100598413,
  author = {So Nishimura and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe – Quantitative Evaluation of Observation Possibility –},
  journal = {Jpn. J. Appl.Phys.},
  year = 2008,
}

@article{CTT100598411,
  author = {So Nishimura and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe – Quantitative Evaluation of Observation Possibility –},
  journal = {Jap. J. Appl. Phys.},
  year = 2008,
}

@article{CTT100565405,
  author = {Chien-I KUO and Heng-Tung HSU and Edward Yi CHANG and Yasuyuki MIYAMOTO and Wen-Chung TSERN},
  title = {InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100554640,
  author = {Chien-I Kuo and Heng-Tung Hsu and Edward Yi Chang and Chia-Yuan Chang and Yasuyuki Miyamoto and Suman Datta and Marko Radosavljevic and Guo-Wei Huang and Ching Ting Lee},
  title = {RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology},
  journal = {IEEE Electron Device Lett.},
  year = 2008,
}

@article{CTT100549485,
  author = {Mitsuhiko Igarashi and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation},
  journal = {Physica Status Solidi(C)},
  year = 2008,
}

@inproceedings{CTT100565411,
  author = {Yasuyuki Miyamoto and Takashi Hasegawa and Hisashi Saito and Kazuhito Furuya},
  title = {RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576980,
  author = {Shinnosuke Takahashi and Hiroaki Yamashita and Takashi Kobayashi and Yuji Isogai and Hiroyuki Suzuki and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {InP/InGaAs SHBTs with 200nm wide emitter fabricated by EB lithography},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100565409,
  author = {C. Y. Chang and H. T. Hsu and E. Y. Chang and C. I. Kuo and Y. Miyamoto},
  title = {InAs-Channel HEMTs for Ultra- Low-Power LNA Applications},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100565410,
  author = {T. Kanazawa and H. Saito and K. Wakabayashi and Y. Miyamoto and K. Furuya},
  title = {Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576793,
  author = {Hisashi Saito and Ryoung-A Maeng and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Improvement of gate controllability of Hot Electron Transistor controlled by insulated gate},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576977,
  author = {Takafumi Uesawa and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {Monte Carlo Simulation of Plasmon Scattering in Base Layer of InP/InGaAs HBTs},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100583676,
  author = {Toru Kanazawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO and Hisashi Saito and kazuya wakabayashi and Tomonori Tajima},
  title = {Lateral buried growth of n<sup>+</sup>-InGaAs source/drain region for high drive current III-V channel MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576789,
  author = {H. Saito and Y. Miyamoto and K. FUruya},
  title = {Increment of voltage gain of InP/InGaAs Hot Electron Transistors controlled by insulated gate},
  booktitle = {Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International},
  year = 2008,
}

@inproceedings{CTT100563450,
  author = {So Nishimura and TUYOSHI ARAI and YASUYUKI MIYAMOTO and KAZUHITO FURUYA},
  title = {弾道電子放出顕微鏡を利用した電子波回折観測の可能性},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576962,
  author = {Chien-I  Kuo and Edward Yi  Chang and Chia-Yuan  Chang and Heng-Tung  Hsu and YASUYUKI MIYAMOTO},
  title = {Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100565408,
  author = {Hisashi Saito and Takahiro Hino and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Hot electron transistor controlled by insulated gate with 70nm-wide emitter},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576792,
  author = {Hisashi Saito and Maeng Ryoung-A and Yasuyuki Miyamoto and Kazuhito Furuya},
  title = {Voltage gain increase of Hot Electron Transistor controlled by insulated gate},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100563452,
  author = {TOMOHIRO YAMADA and Takafumi Uesawa and KAZUHITO FURUYA and YASUYUKI MIYAMOTO},
  title = {ゲート制御ホットエレクトロントランジスタのバリスティックモデル解析},
  booktitle = {},
  year = 2008,
}