@article{CTT100642251,
  author = {Atsushi Kato and Toru Kanazawa and Shunsuke Ikeda and Yosiharu Yonai and Yasuyuki Miyamoto},
  title = {Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode},
  journal = {IEICE Trans. Electron.},
  year = 2012,
}

@article{CTT100642252,
  author = {Naoaki Takebe and Y. Miyamoto},
  title = {Reduction of base-collector capacitance in InP/InGaAs DHBT with buried SiO2 wires},
  journal = {IEICE Trans. Electron.},
  year = 2012,
}

@article{CTT100642250,
  author = {Hisashi Saito and Y. Miyamoto},
  title = {Reduction of Output Conductance in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region},
  journal = {Applied Phys. Exp.},
  year = 2012,
}

@article{CTT100659577,
  author = {F. Fatah and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and C.-Y. Hsu and Y. Miyamoto and E. Y. Chang},
  title = {Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz},
  journal = {JPN. J. APPL. PHYS.},
  year = 2012,
}

@inproceedings{CTT100659769,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {MOSFET低電圧化の為のInGaAs チャネル},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659716,
  author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and T. Nanjo and K. Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Simulation study and reduction of reverse gate leakage current for GaN HEMTs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659768,
  author = {Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAs ヘテロ接合を用いた縦型トンネル FET における サブスレッショルドスロープの改善},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659767,
  author = {atsushi kato and Yosiharu Yonai and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659766,
  author = {Masashi Kashiwano and Jun Hirai and Shunsuke Ikeda and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659765,
  author = {Takeru Sagai and Yosiharu Yonai and YASUYUKI MIYAMOTO},
  title = {InGaAs チャネル MOSFET の EOT 削減による 伝達コンダクタンス向上},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659764,
  author = {Keishi Tanaka and YASUYUKI MIYAMOTO},
  title = {55 nm 幅エミッタInP HBT および電流密度とエミッタ幅の関係},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659763,
  author = {大石敏之 and 林一夫 and 佐々木肇 and Yuutarou Yamaguchi and 大塚浩志 and 山中宏治 and 中山正敏 and YASUYUKI MIYAMOTO},
  title = {トランジスタ動作時における GaN HEMT ゲートリークのデバイスシミュレーションによる解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659714,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659707,
  author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and K. Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659713,
  author = {T. Oishi and K. Hayashi and Y. Yamaguchi and H. Otsuka and K.  Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100639796,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Miyouga and Eijun Murai and Takahiko Shindou and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {---},
  booktitle = {第73回秋季応用物理学会学術講演会},
  year = 2012,
}

@inproceedings{CTT100791532,
  author = {山口 裕太郎 and 林 一夫 and 大石 敏之 and 大塚 浩志 and 小山 英寿 and 加茂 宣卓 and 山中 宏治 and 中山 正敏 and YASUYUKI MIYAMOTO},
  title = {C-10-5 GaN HEMTの電界とゲートドレイン間容量のトレードオフとPAEへの影響についてのシミュレーション解析(C-10. 電子デバイス,一般セッション)},
  booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
  year = 2012,
}

@inproceedings{CTT100659705,
  author = {M. Fujimatsu and H. Saito and Y. Miyamoto},
  title = {71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659706,
  author = {K. Tanaka and Y. Miyamoto},
  title = {InP HBT with 55-nm-wide Emitter and Relationship between Emitter Width and Current Density},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642429,
  author = {Masashi Kashiwano and Jun Hirai and Shunsuke Ikeda and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642425,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {エヒ?タキシャル成長ソースによる InGaAs MOSFET の高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642428,
  author = {Masashi Kashiwano and Jun Hirai and Shunsuke Ikeda and Motohiko Fujimatsu and YASUYUKI MIYAMOTO},
  title = {GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642418,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {エピタキシャル成長ソースによるInGaAsMOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642427,
  author = {Yuutarou Yamaguchi and 大石敏之 and 大塚浩志 and 山中宏治 and 南條拓真 and 中山正敏 and 平野嘉仁 and YASUYUKI MIYAMOTO},
  title = {デバイスシミュレーションによるGaN HEMTのゲートリークの解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642426,
  author = {Yosiharu Yonai and Toru Kanazawa and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {InPエッチング異方性による微細InGaAsチャネルMOSFET},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642424,
  author = {YASUYUKI MIYAMOTO and Masayuki Yamada and Ken Uchida},
  title = {InGaAs MOSFETにおけるソース充電時間の検討},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642423,
  author = {YASUYUKI MIYAMOTO and Yosiharu Yonai and Toru Kanazawa},
  title = {InGaAs MOSFETの高電流密度化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642380,
  author = {Jun Hirai and Tomoki Kususaki and Shunsuke Ikeda and YASUYUKI MIYAMOTO},
  title = {Vertical InGaAs MOSFET with HfO2 gate},
  booktitle = {},
  year = 2012,
}

@misc{CTT100665190,
  author = {YASUYUKI MIYAMOTO},
  title = {光電気化学装置および半導体装置の製造方法},
  howpublished = {PublishedPatent},
  year = 2013,
  month  = {},
  note   = {特願2012-011185(2012/01/23), 特開2013-149914(2013/08/01)}
}


@misc{CTT100639691,
  author = {YASUYUKI MIYAMOTO},
  title = {電界効果トランジスタ},
  howpublished = {PublishedPatent},
  year = 2012,
  month  = {},
  note   = {特願2010-204769(2010/09/13), 特開2012-060082(2012/03/22)}
}