@book{CTT100659565,
  author = {芝原 健太郎 and YASUYUKI MIYAMOTO and Ken Uchida},
  title = {タウア・ニン 最新VLSIの基礎 第二版},
  publisher = {丸善},
  year = 2013,
}

@article{CTT100659579,
  author = {E. Y. Chang and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and Y. Miyamoto},
  title = {InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications},
  journal = {Appl. Phys. Exp.},
  year = 2013,
}

@article{CTT100659578,
  author = {C.-H. Yu and H.-T. Hsu and C.-Y. Chiang and C.-I Kuo and Y. Miyamoto and E. Y. Chang},
  title = {Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@article{CTT100659581,
  author = {K. Hayashi and Y. Yamaguchi and T. Oishi and H. Ostuka and K. Yamanaka and M. Nakayama and Y. Miyamoto},
  title = {Mechanism Study of Gate Leakage Current for AlGaN/GaN HEMT Structure Under High Reverse Bias by TSB Model and TCAD Simulation},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@article{CTT100659703,
  author = {林 一夫 and 大石 敏之 and 加茂 宣卓 and Yuutarou Yamaguchi and 大塚 浩志 and 山中 宏治 and 中山 正敏 and YASUYUKI MIYAMOTO},
  title = {AlGaN/GaN HEMTにおけるドレーン漏れ電流の解析},
  journal = {電子情報通信学会論文誌. C, エレクトロニクス},
  year = 2013,
}

@article{CTT100659702,
  author = {Takafumi Uesawa and YASUYUKI MIYAMOTO},
  title = {縦型 ゲート制御ホットエレクトロントランジスタの新しい遮断周波数算出方法},
  journal = {電子情報通信学会論文誌},
  year = 2013,
}

@article{CTT100659580,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@inproceedings{CTT100679165,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and K. Ohsawa and M. Oda and T. Irisawa and T. Tezuka},
  title = {Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679166,
  author = {T. Irisawa and M. Oda and K. Ikeda and Y. Moriyama and E. Mieda and W. Jevasuwan and T. Maeda and O. Ichikawa and T. Osada and M. Hata and Y. Miyamoto and T. Tezuka},
  title = {High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Growth on Narrow Fin Structures},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664543,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {メタマテリアルを用いたInP系プラットフォームにおける透磁率制御},
  booktitle = {IEICE Technical Report},
  year = 2013,
}

@inproceedings{CTT100676854,
  author = {Yuki Atsumi and N. Taksatorn and N. Nishiyama and Y. Miyamoto and S.Arai},
  title = {Miniaturization of exposure area for electron beam lithography using proximity effect correction toward Si optical circuits},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654650,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {(Invited) Photonic metamaterials in semiconductor optical devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100791463,
  author = {山口 裕太郎 and 林 一夫 and 大石 敏之 and 大塚 浩志 and 山中 宏治 and YASUYUKI MIYAMOTO},
  title = {C-10-1 ソースフィールドプレートGaN HEMTのドレインソース間容量とドレイン抵抗のトレードオフの解析(C-10.電子デバイス,一般セッション)},
  booktitle = {電子情報通信学会ソサイエティ大会講演論文集},
  year = 2013,
}

@inproceedings{CTT100679174,
  author = {Masashi Kashiwano and Atsushi Yukimachi and YASUYUKI MIYAMOTO},
  title = {急峻なSS特性の為のInGaAs/InP超格子FETにおけるキャリア濃度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679172,
  author = {Kazuto Ohsawa and atsushi kato and Takeru Sagai and Toru Kanazawa and Eiji Uehara and YASUYUKI MIYAMOTO},
  title = {高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679176,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {InGaAs MOSFETの現状と将来展望},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678939,
  author = {K. Ohsawa and A. Kato and T. Sagai and T. Kanazawa and E. Uehara and Y. Miyamoto},
  title = {Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100679164,
  author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
  title = {Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678948,
  author = {Y. Yamaguchi and K. Hayashi and T. Oishi and H. Otsuka and K. Yamanaka and Y. Miyamoto},
  title = {Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678944,
  author = {M. Oda and T. Irisawa and E. Mieda and Y. Kurashima and H. Takagi and W. Jevasuwan and T. Maeda and O. Ichikawa and T. Ishihara and T. Osada and Y. Miyamoto and T. Tezuka},
  title = {Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100678936,
  author = {Y. Miyamoto},
  title = {InGaAs channel MOSFET for high-speed/low-power application},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100653652,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659719,
  author = {A. Kato and T. Kanazawa and Eiji Uehara and Y. Yonai and Y. Miyamoto},
  title = {Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659774,
  author = {YASUYUKI MIYAMOTO},
  title = {東工大の微細加工プラットフォームにおける支援事例},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100648390,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Miyouga and Eijun Murai and Takahiko Shindou and JoonHyun Kang and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {微細金属構造をもつ導波路型光デバイスにおける相互作用距離の解析},
  booktitle = {第60回応用物理学関係連合講演会},
  year = 2013,
}

@inproceedings{CTT100659771,
  author = {YASUYUKI MIYAMOTO and Motohiko Fujimatsu},
  title = {GaAsSb/InGaAs 縦型トンネル FET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659772,
  author = {Takeru Sagai and Eiji Uehara and Kazuto Ohsawa and YASUYUKI MIYAMOTO},
  title = {n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659773,
  author = {YASUYUKI MIYAMOTO},
  title = {超高速トランジスタ技術の現状と展望},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659775,
  author = {atsushi kato and Yosiharu Yonai and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Si 基板上 InGaAs-MOSFET の微細化に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659770,
  author = {YASUYUKI MIYAMOTO},
  title = {微細加工ナノプラットフォームコンソーシアムによる設備共用の取り組み},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100645875,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Seiji Myoga and Eijun Murai and Takahiko Shindo and J. Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial},
  booktitle = {},
  year = 2013,
}

@misc{CTT100677655,
  author = {YASUYUKI MIYAMOTO and Masashi Kashiwano and Toru Kanazawa},
  title = {電界効果トランジスタ},
  howpublished = {PublishedPatent},
  year = 2014,
  month  = {},
  note   = {特願2013-001907(2013/01/09), 特開2014-135359(2014/07/24)}
}


@misc{CTT100665190,
  author = {YASUYUKI MIYAMOTO},
  title = {光電気化学装置および半導体装置の製造方法},
  howpublished = {PublishedPatent},
  year = 2013,
  month  = {},
  note   = {特願2012-011185(2012/01/23), 特開2013-149914(2013/08/01)}
}


@misc{CTT100657647,
  author = {YASUYUKI MIYAMOTO and Toru Kanazawa},
  title = {電界効果トランジスタ},
  howpublished = {PublishedPatent},
  year = 2013,
  month  = {},
  note   = {特願2011-165385(2011/07/28), 特開2013-030604(2013/02/07)}
}