@book{CTT100673613,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability Engineering of Semiconductor Photonic Devices},
  publisher = {Nova Science Publishers},
  year = 2015,
}

@article{CTT100715190,
  author = {F. A. Fatah and Y.-C. Lin and T.-Y. Lee and K.-C. Yang and R.-X. Liu and J.-R. Chan and H.-T. Hsu and Y. Miyamoto and E. Y. Chang},
  title = {Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications},
  journal = {Solid State Sci. Technol},
  year = 2015,
}

@article{CTT100693012,
  author = {R Yamanaka and T. Kanazawa and E. Yagyu and Y. Miyamoto},
  title = {Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique},
  journal = {Jpn. J. Appl.Phys.},
  year = 2015,
}

@article{CTT100693011,
  author = {K. Ohashi and M. Fujimatsu and S. Iwata and Y. Miyamoto},
  title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs},
  journal = {Jpn. J. Appl.Phys.},
  year = 2015,
}

@article{CTT100682922,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and JoonHyun Kang and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {Permeability-controlled Optical Modulator with Tri-gate Metamaterial: Control of Permeability on InP-based Photonic Integration Platform},
  journal = {Scientific Reports},
  year = 2015,
}

@inproceedings{CTT100717942,
  author = {K. Makiyama and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and Y. Niida and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100709147,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Takuo Tanaka and Kenji Tsuruta and Yasuyuki Miyamoto},
  title = {HfS2 Electric Double Layer Transistor with High Drain Current},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100717934,
  author = {S. Iwata and W. Lin and K. Fukuda and Y. Miyamoto},
  title = {Design of drain for low off current in GaAsSb/InGaAs tunnel FETs},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721929,
  author = {Y. Miyamoto and M. Fujimatsu and K. Ohashi and A. Yukimachi and S. Iwata},
  title = {Steep subthreshold slope in InGaAs MOSFET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721938,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata},
  title = {InGaAs channel for low supply voltage},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100800887,
  author = {Haruki Kinoshita and Toru Kanazawa and Netsu Seikou and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100800888,
  author = {Atsushi Yukimachi and YASUYUKI MIYAMOTO},
  title = {超格子FET のためのAlAs/InGaAsダブルバリアp-i-n 接合ダイオード},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721910,
  author = {H.Kinoshita and S.Netsu and Y.mishima and T.Kanazawa and Y.Miyamoto},
  title = {Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100716504,
  author = {S. Netsu and T. Kanazawa and Y. Miyamoto},
  title = {Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721886,
  author = {K. Ohsawa and Y. Mishima and Y. Miyamoto},
  title = {Operation of 13-nm channel length InGaAs-MOSFET with n-InP source},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693222,
  author = {T. Kanazawa and T. Amemiya and A. Ishikawa and V. Upadhyaya and K. Tsuruta and T. Tanaka and Y. Miyamoto},
  title = {Fabrication of Thin-Film HfS2 FET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100677904,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Takuo Tanaka and Shigehisa Arai},
  title = {(Invited) Possibility of permeability control on InP-based photonic integration platform},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682919,
  author = {Tomohiro Amemiya and Atsushi Ishikawa and Toru Kanazawa and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {光通信素子における透磁率制御の可能性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693239,
  author = {Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682905,
  author = {Atsushi Ishikawa and Toru Kanazawa and Tomohiro Amemiya and Kenji Tsuruta and Takuo Tanaka and YASUYUKI MIYAMOTO},
  title = {機械的剥離法を用いたHfS2原子薄膜の作製と基礎物性の評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100682907,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and YASUYUKI MIYAMOTO},
  title = {薄膜HfS2 FET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693235,
  author = {Shinjiro Iwata and Kazumi Ohashi and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693236,
  author = {YASUYUKI MIYAMOTO and Atsushi Yukimachi},
  title = {超格子ソースによるスティープスロープFETの可能性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693237,
  author = {Kazuto Ohsawa and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {InGaAs-MOSFETのチャネル長微細化に関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693238,
  author = {Haruki Kinoshita and Toru Kanazawa and Netsu Seikou and Yuichi Mishima and YASUYUKI MIYAMOTO},
  title = {再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693240,
  author = {Atsushi Yukimachi and Masashi Kashiwano and YASUYUKI MIYAMOTO},
  title = {超格子FETに向けたダブルバリアp-i-n接合ダイオード},
  booktitle = {},
  year = 2015,
}