@article{CTT100738834,
  author = {A. Yukimachi and Y. Miyamoto},
  title = {InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope},
  journal = {Jpn. J. Appl. Phys.},
  year = 2016,
}

@article{CTT100722080,
  author = {Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {二次元材料HfS2を用いたMOSトランジスタ},
  journal = {月刊機能材料},
  year = 2016,
}

@article{CTT100738833,
  author = {Y. Miyamoto},
  title = {Recent progress in compound semiconductor electron devices (Review paper)},
  journal = {IEICE Electronics Express},
  year = 2016,
}

@article{CTT100735791,
  author = {Nobukazu Kise and Haruki Kinoshita and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain},
  journal = {Solid-State Electronics},
  year = 2016,
}

@article{CTT100916300,
  author = {Wenbo Lin and Shinjiro Iwata and Koichi Fukuda and Yasuyuki Miyamoto},
  title = {Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100738793,
  author = {YASUYUKI MIYAMOTO},
  title = {III-V族チャネルを持つMOSFET (特集解説)},
  journal = {電気学会論文誌C},
  year = 2016,
}

@article{CTT100738795,
  author = {Shinjiro Iwata and Kazumi Ohashi and Wenbo Lin and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性},
  journal = {電気学会論文誌C},
  year = 2016,
}

@article{CTT100709138,
  author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Few Layer HfS2 FET},
  journal = {Scientific Reports},
  year = 2016,
}

@article{CTT100715509,
  author = {F. A. Fatah and Y.-C. Lin and R.-X. Liu and K.-C. Yang and T.-W. Lin and H.-T. Hsu and J.-H. Yang and Y. Miyamoto and H. Iwai and C. Hu and S. Salahuddin and E. Y. Chang},
  title = {A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,},
  journal = {Applied Physics Express},
  year = 2016,
}

@inproceedings{CTT100740975,
  author = {K. Makiyama and Y. Niida and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740976,
  author = {K. Ohsawa and N. Kise and Y. Miyamoto},
  title = {Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740907,
  author = {Kazuto Ohsawa and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722102,
  author = {Toru Kanazawa and Vikrant Upadhyaya and Tomohiro Amemiya and Atsushi Ishikawa and 鶴田 健二 and Takuo Tanaka and YASUYUKI MIYAMOTO},
  title = {HfO2パッシベーションによるHfS2 FETの特性改善},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740969,
  author = {K. Makiyama and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and Y. Niida and Y. Kamada and M. Sato and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {High-Performance GaN-HEMT Technology for W-band Amplifier (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100722083,
  author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Effect of the HfO2 passivation on HfS2 Transistors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740965,
  author = {K. Makiyama and S. Ozaki and Y. Niida and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740963,
  author = {M. Kashiwano and A. Yukimachi and Y. Miyamoto},
  title = {Experimental approach for feasibility of superlattice FETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740962,
  author = {Y. Miyamoto and W. Lin and S.Iwata and K. Fukuda},
  title = {Steep sub-threshold slope in short-channel InGaAs TFET  (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100709160,
  author = {Tomohiro Amemiya and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Tatsuhiro Urakami and Takuo Tanaka and Shigehisa Arai},
  title = {(Invited) Permeability Engineering in Optical Communication Devices},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725110,
  author = {Vikrant Upadhyaya and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {Vacuum annealing and passivation of Hf<sub>2</sub> FET for mitigation of atmospheric degradation},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725185,
  author = {Haruki Kinoshita and Nobukazu Kise and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725183,
  author = {Vikrant Upadhyaya and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Evaluation of electrical properties of HfS<sub>2</sub> thin flakes obtained by mechanical exfoliation},
  booktitle = {信学技報},
  year = 2016,
}

@inproceedings{CTT100740895,
  author = {Haruki Kinoshita and Nobukazu Kise and Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740893,
  author = {Wenbo Lin and Shinjiro Iwata and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {Contribution to Off-Current of Source-Drain Direct Tunneling in Short-Channel TFET},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725184,
  author = {Haruki Kinoshita and Nobukazu Kise and Netsu Seikou and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725116,
  author = {Upadhyaya Vikrant and kanazawa Toru and Miyamoto Yasuyuki},
  title = {Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100715673,
  author = {Y. Miyamoto},
  title = {Steep slope devices with InGaAs channel for post Si CMOS application},
  booktitle = {},
  year = 2016,
}

@misc{CTT100710319,
  author = {YASUYUKI MIYAMOTO and Ryota Yamanaka and Toru Kanazawa},
  title = {半導体装置の製造方法
},
  howpublished = {PublishedPatent},
  year = 2016,
  month  = {},
  note   = {特願2014-174229(2014/08/28), 特開2016-051722(2016/04/11)}
}