@article{CTT100735623,
  author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
  title = {Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2017,
}

@article{CTT100741627,
  author = {Vikrant UPADHYAYA and Toru KANAZAWA and Yasuyuki MIYAMOTO},
  title = {Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation},
  journal = {IEICE Transactions on Electronics},
  year = 2017,
}

@article{CTT100738837,
  author = {K. Ohsawa and S. Netsu and N. Kise and S. Noguchi and Y. Miyamoto},
  title = {Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks},
  journal = {Jpn. J. Appl. Phys.},
  year = 2017,
}

@inproceedings{CTT100757917,
  author = {Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Development of Field-Effect Transistor  Using 2D Layered Hafnium Disulfide},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100758803,
  author = {K. Makiyama and T. Ohki and S. Ozaki and Y. Niida and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and T. Ishiguro and K. Joshin and N. Nakamura and Y. Miyamoto},
  title = {InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747612,
  author = {Netsu Seikou and Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {HfS2/MoS2 ヘテロジャンクションの温度依存電流特性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747615,
  author = {Kazuto Ohsawa and Toru Kanazawa and Nobukazu Kise and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752193,
  author = {Syougo Kunisada and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {[8a-C18-3] InGaAs/GaAsSbダブルゲートTunnel FETにおける量子効果の影響},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752196,
  author = {Nobukazu Kise and Shinjiro Iwata and Ryousuke Aonuma and YASUYUKI MIYAMOTO},
  title = {[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752547,
  author = {D. Nakajun and R. F. T. Fathulah and H. Fujita and E. Yagyu and Y. Miyamoto},
  title = {Multi-level inverter by GaN HEMT on semi-insulating substrate},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747601,
  author = {Seiko Netsu and Toru Kanazawa and Vikrant Upadhyaya and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type II HfS2/MoS2 heterojunction Tunnel FET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752745,
  author = {K. Makiyama and S. Ozaki and Y. Niida and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Yoichi Kamada and K. Joshin and N. Nakamura and Yasuyuki Miyamoto},
  title = {Advanced HEMTs and MMICs Technologies for Next Generation Millimeter-wave Amplifiers (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752710,
  author = {YASUYUKI MIYAMOTO},
  title = {ヘテロ構造電子デバイスとMOVPE/MBE (チュートリアル講演)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752724,
  author = {Y. Miyamoto and D. Nakajun and R. F. T. Fathulah and H. Fujita and E. Yagyu},
  title = {High speed GaN HEMT for power electronics (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752746,
  author = {N. Kise and S. Iwata and R. Aonuma and K. Ohsawa and Y. Miyamoto},
  title = {GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752749,
  author = {K. Makiyama and Y. Niida and S. Ozaki and T. Ohki and N. Okamoto and Y. Minoura and M. Sato and Y. Kamada and K. Joshin and K. Watanabe and Y. Miyamoto},
  title = {GaN HEMT Device Technology for W-band Power Amplifiers (Invited)},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740070,
  author = {Shinjiro Iwata and Nobukazu Kise and Ryousuke Aonuma and YASUYUKI MIYAMOTO},
  title = {[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740854,
  author = {Kazuto Ohsawa and Shinji Noguchi and Netsu Seikou and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735618,
  author = {Toru Kanazawa and Tomohiro Amemiya and Netsu Seikou and Vikrant Upadhyaya and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {HfS2系トンネルトランジスタのデバイスシミュレーション},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738888,
  author = {Ryousuke Aonuma and Shinjiro Iwata and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735914,
  author = {Netsu Seikou and Toru Kanazawa and Vikrant Upadhyaya and ウワンノー ティーラユット and Tomohiro Amemiya and 長汐 晃輔 and YASUYUKI MIYAMOTO},
  title = {Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100735598,
  author = {Tomohiro Amemiya and Satoshi Yamasaki and Toru Kanazawa and Atsushi Ishikawa and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and Takuo Tanaka and SHIGEHISA ARAI},
  title = {光回路とプラズモニックメタマテリアル},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740944,
  author = {Kazuto Ohsawa and Shinji Noguchi and Netsu Seikou and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響},
  booktitle = {信学技報},
  year = 2017,
}