@article{CTT100766771,
  author = {Seiko Netsu and Toru Kanazawa and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
  title = {Type-II HfS2/MoS2 Heterojunction Transistors},
  journal = {IEICE Transactions on Electronics},
  year = 2018,
}

@article{CTT100800891,
  author = {S. Netsu and M. Hellenbrand and C. B. Zota and Y. Miyamoto and E. Lind},
  title = {A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2018,
}

@inproceedings{CTT100800931,
  author = {Y. Miyamoto},
  title = {Prospective New Fuctionality of Monolithic GaN HEMT Integrated Circuits},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800934,
  author = {Y. Miyamoto and N. Kise and R. Aonuma},
  title = {GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800930,
  author = {K. Hotta and Y. Tomizuka and K. Itagaki and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800850,
  author = {Tomohiro Amemiya and 吉田 知也 and 渥美 祐樹 and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and 榊原 陽一 and SHIGEHISA ARAI},
  title = {Siフォトニクスによる光渦MUX/DEMUXモジュール},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2018,
}

@inproceedings{CTT100800851,
  author = {Ryousuke Aonuma and Nobukazu Kise and YASUYUKI MIYAMOTO},
  title = {Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800852,
  author = {Koushi Hotta and Yumiko Tomizuka and Kosuke Itagaki and 眞壁 勇夫 and 吉田 成輝 and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMT構造のコンタクト抵抗の熱処理温度依存性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800853,
  author = {Tomohiro Amemiya and 吉田 知也 and Yuki Atsumi and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and 榊原 陽一 and SHIGEHISA ARAI},
  title = {Si湾曲カプラを用いた光渦MUX/DEMUXモジュール},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800854,
  author = {Wenlun Zhang and Netsu Seikou and Toru Kanazawa and Tomohiro Amemiya and YASUYUKI MIYAMOTO},
  title = {埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800883,
  author = {吉田匡廣 and 比嘉康貴 and Nobuhiko Nishiyama and YASUYUKI MIYAMOTO and 加木信行},
  title = {測距用14xx-nm Eye-safe波長帯高出力エピタキシャルスタックパルスレーザ},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800939,
  author = {Y. Higa and M. Yoshida and N. Nishiyama and Y. Miyamoto and Nobuyuki Kagi},
  title = {High Power, 14xx-nm Eye-safe, Epitaxially Stacked Pulse Laser for Detection and Ranging Applications},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800928,
  author = {R. Aonuma and N. Kise and Y. Miyamoto},
  title = {Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800886,
  author = {Shinjiro Iwata and Kazumi Ohashi and Netsu Seikou and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800925,
  author = {W. Zhang and S. Netsu and T.Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800924,
  author = {D. Nakajun and N. Kanai and R. F. T. Fathulah and H. Fujita and E. Yagyu and Y. Miyamoto},
  title = {Multi-level inverter toward GaN HEMT monolithic integrated circuit},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100799619,
  author = {Nanae Kanai and Kenichi Okada and Yasuyuki Miyamoto},
  title = {Investigation of Active Load Matching Using GaN HEMT as Digital Switch},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800923,
  author = {Y.Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and Kazuto Ohsawa},
  title = {Regrown Source / Drain in InGaAs Multi-Gate MOSFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816315,
  author = {YASUYUKI MIYAMOTO},
  title = {The Potential of GaN HEMT on GaN Substrate},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768825,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryosuke Aonuma and Yasuyuki Miyamoto},
  title = {Fabrication of InGaAs Nanosheet Transistors with Regrown Source},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800885,
  author = {Syougo Kunisada and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsダブルゲートTunnel FETにおける量子効果の検討‐正孔バンドの取り扱い},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800884,
  author = {Nobukazu Kise and Ryousuke Aonuma and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100759540,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryousuke Aonuma and YASUYUKI MIYAMOTO},
  title = {InGaAsナノシートトランジスタの作製},
  booktitle = {},
  year = 2018,
}