@article{CTT100800921,
  author = {Y. Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and K. Ohsawa},
  title = {Regrown Source/Drain in InGaAs Multi-Gate MOSFETs},
  journal = {J. Crystal Growth},
  year = 2019,
}

@article{CTT100800916,
  author = {K. Hotta and Y. Tomizuka and K. Itagaki and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@article{CTT100800918,
  author = {W Zhang and T. Kanazawa and Y. Miyamoto},
  title = {Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment},
  journal = {Apl. Phys. Exp},
  year = 2019,
}

@article{CTT100800893,
  author = {R. Aonuma and N. Kise and Y. Miyamoto},
  title = {GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature},
  journal = {Jpn. J. Appl. Phys.},
  year = 2019,
}

@article{CTT100800892,
  author = {W Zhang and S. Netsu and T. Kanazawa and T. Amemiya and Y. Miyamoto},
  title = {Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@inproceedings{CTT100828196,
  author = {Moataz Eissa and Takuya Mitarai and Tomohiro Amemiya and Nobuhiko Nishiyama and Yasuyuki Miyamoto},
  title = {Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100822691,
  author = {K. Fukuda and N. Nogami and S. Kunisada and Y. Miyamoto},
  title = {Circuit speedoriented device design scheme for double gate hetero tunnel FETs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100803276,
  author = {Moataz Eissa and Takuya Mitarai and Tomohiro Amemiya and Nobuhiko Nishiyama and Yasuyuki Miyamoto},
  title = {Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100822692,
  author = {Akihiro Hayasaka and Ryousuke Aonuma and Koushi Hotta and Nanae Kanai and 眞壁 勇夫 and 吉田 成輝 and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100822685,
  author = {M.Kitamura and T.Kanazawa and Y.Miyamoto},
  title = {Evaluation of fabricationmethod of InGaAs nanosheet},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800938,
  author = {Y. Miyamoto},
  title = {Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100803257,
  author = {Tomohiro Amemiya and Tomoya Yoshida and Yuki Atsumi and Yasuyuki Miyamoto and Yoichi Sakakibara and Shigehisa Arai},
  title = {Si-based Orbital Angular Momentum Mux/Demux Module},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800936,
  author = {A. Hayasaka and R. Aonuma and K. Hotta and I. Makabe and S. Yoshida and Y. Miyamoto},
  title = {N-polar GaN HEMT with Al2O3 gate insulator},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800846,
  author = {Akihiro Hayasaka and Ryousuke Aonuma and Koushi Hotta and 眞壁 勇夫 and 吉田 成輝 and YASUYUKI MIYAMOTO},
  title = {Al2O3ゲート絶縁膜を持つN極性GaN HEMT},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100803268,
  author = {Tomohiro Amemiya and Tomoya Yoshida and Yuki Atsumi and Nobuhiko Nishiyama and Yasuyuki Miyamoto and Yoichi Sakakibara and Shigehisa Arai},
  title = {Orbital Angular Momentum Mux/Demux Module Using Vertically Curved Si Waveguides},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100803290,
  author = {Tomohiro Amemiya and Tomoya Yoshida and Yuki Atsumi and nobuhiko nishiyama and YASUYUKI MIYAMOTO and Yoichi Sakakibara and SHIGEHISA ARAI},
  title = {Siフォトニクスによる光渦MUX/DEMUXモジュール},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800847,
  author = {Wenlun Zhang and Toru Kanazawa and Minoru Kitamura and YASUYUKI MIYAMOTO},
  title = {UV-O3表面酸化によるHfS2 MOSFETの性能改善},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800849,
  author = {Naoya Nogami and Koichi Fukuda and YASUYUKI MIYAMOTO},
  title = {量子効果の影響を考慮したGaAsSb/InGaAs Double-Gate Tunnel FETの検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800848,
  author = {Minoru Kitamura and Toru Kanazawa and YASUYUKI MIYAMOTO},
  title = {HSQを用いたInGaAsナノシート構造作製法評価},
  booktitle = {},
  year = 2019,
}