@article{CTT100842262,
  author = {Moataz Eissa and Takuya Mitarai and Tomohiro Amemiya and Yasuyuki Miyamoto and Nobuhiko Nishiyama},
  title = {Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100830305,
  author = {Yasuyuki Miyamoto and Takahiro Gotow},
  title = {Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer},
  journal = {IEICE Transactions on Electronics},
  year = 2020,
}

@article{CTT100822681,
  author = {K. Fukuda and N. Nogami and S. Kunisada and Y. Miyamoto},
  title = {Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs},
  journal = {Jpn. J. Appl. Phys.},
  year = 2020,
}

@inproceedings{CTT100842580,
  author = {Tomoya Aota and Akihiro Hayasaka and isao makabe and Shigeki Yoshida and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100842581,
  author = {Tomoya Aota and Akihiro Hayasaka and isao makabe and Shigeki Yoshida and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMT構造での無電極PECエッチング},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100822693,
  author = {Masahiro Mori and Akihiro Hayasaka and 眞壁 勇夫 and 吉田 成輝 and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMT構造におけるコンタクト抵抗の低減},
  booktitle = {},
  year = 2020,
}