@article{CTT100875016,
  author = {YASUYUKI MIYAMOTO and Takahiro Gotow},
  title = {GaN HEMTでの二次元電子ガスキャリヤ濃度と ゲートドレイン間リーク電流理論計算},
  journal = {電気学会論文誌C},
  year = 2022,
}

@inproceedings{CTT100887485,
  author = {K. Makiyama and S. Yoshida and K. Nakata and Y. Miyamoto},
  title = {Innovative RF Device Technologies for Advanced Information and Communications Network Society},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100887483,
  author = {Y. Ito and S. Tamai and T. Hoshi and Y. Miyamoto},
  title = {GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100887482,
  author = {Y. Miyamoto and K. Makiyama},
  title = {Lateral thickness change of the high-k film on GaN HEMT for uniform electric field},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875027,
  author = {T. Gotow and T. Arai and T. Aota and Y. Miyamoto},
  title = {Evaluation of TMAH treatment for isolation process of N-polar GaN HEMTs},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100880230,
  author = {Takahiro Arai and Tomoya Aota and isao makabe and 中田健 and Takahiro Gotow and YASUYUKI MIYAMOTO},
  title = {N極性GaN HEMTのTMAHによる素子分離},
  booktitle = {},
  year = 2022,
}