@article{CTT100887487,
  author = {Y. Ito and S. Tamai and T. Hoshi and T. Gotow and Y. Miyamoto},
  title = {Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers},
  journal = {JPN. J. APPL. PHYS.},
  year = 2023,
}

@article{CTT100887491,
  author = {J. Kotani and K. Makiyama and T. Ohki and S. Ozaki and N. Okamoto and Y. Minoura and M. Sato and N. Nakamura and Y. Miyamoto},
  title = {High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers},
  journal = {ELECTRON. LETT.},
  year = 2023,
}

@inproceedings{CTT100887486,
  author = {Y. Miyamoto and N. Nishiyama and S. Suzuki},
  title = {Electron beam lithography in processes for electron/opto/teraherz devices},
  booktitle = {},
  year = 2023,
}