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Publication List - Takamasa Kawanago 2013 (15 / 94 entries)
Journal Paper
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Miranda Enrique,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
J.Sune,
HIROSHI IWAI.
Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown,
[Microelectronic Engineering,
Vol. 109,
pp. 322-325,
Sept. 2013.
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Miranda Enrique,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
J. Sune,
HIROSHI IWAI.
Analysis and Simulation of the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime,
IEEE ELECTRON DEVICE LETTERS,
Vol. 34,
No. 6,
pp. 798-800,
June 2013.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
takeo hattori,
Kenji Natori,
HIROSHI IWAI.
Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure,
Solid-State Electronics,
Vol. 84,
pp. 53-57,
June 2013.
International Conference (Reviewed)
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T. Seki,
T. Kawanago,
K. Kakushima,
P. Ahmet,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
K. Tsutsui,
K. Natori,
T. Hattori,
H. Iwai.
Electrical and Infrared Absorption Studies on La-silicate/Si Interface,
IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013),
Feb. 2013.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,
ESSDERC 2013,
2013.
International Conference (Not reviewed / Unknown)
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関拓也,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Infrared absorption study of La-silicate gate dielectrics,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
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関拓也,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
International Symposium on Next-Generation Electronics(ISNE 2013),
International Symposium on Next-Generation Electronics(ISNE 2013),
2013.
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Miranda Enrique,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
J. Sune,
HIROSHI IWAI.
Modeling of the Output Characteristics of Advanced N-MOSFETs After a Severe Gate-to-Channel Dielectric Breakdown,
Insulating Films on Semiconductors(INFOS 2013),
2013.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Interface properties of La-silicate gate dielectrics on Si(110)surface,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
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Takamasa Kawanago,
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure,
15th International Conference on Thin Films,
2013.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Nitrogen incorporated La-silicate gate dielectric with high scalability,
[G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists,
2013.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
片岡好則,
西山彰,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Interface properties of La-silicate gate dielectrics on Si(110)surface,
Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37),
2013.
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Takamasa Kawanago,
Yeonghun Lee,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET,
41st European Solid-State Device Research Conference,
2013.
Domestic Conference (Not reviewed / Unknown)
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
HIROSHI IWAI.
高速・低損失の電子デバイス/パワーデバイスの先導研究,
STARCワークショップ2013,
2013.
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Shu Munekiyo,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
Yoshinori Kataoka,
Akira Nishiyama,
Nobuyuki Sugii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kenji Natori,
HIROSHI IWAI.
ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響,
第74回応用物理学会秋季学術講演会,
2013.
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